ETCHING METHOD
PURPOSE:To improve etch factors by incorporatin a process of forming a chemical resistant film by photographic techniques on side etching surfaces at the time of forming said film on non-worked parts and perform etching. CONSTITUTION:The surface of a metal 1 formed with a chemical resistant film 2 b...
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| creator | BETSUPU SEINI NAGATA JIYUNICHI |
| description | PURPOSE:To improve etch factors by incorporatin a process of forming a chemical resistant film by photographic techniques on side etching surfaces at the time of forming said film on non-worked parts and perform etching. CONSTITUTION:The surface of a metal 1 formed with a chemical resistant film 2 by photographic techniques is etched to a permissible limit of rate of side etching. Next, the 2nd, for example, positive type photosensitive chemical resistant film 3 is formed over the entire surface of the metal 1 surface in the same manner as mentioned above, after which the rays R parallel to the thickness direction of the metal 1 are applied and the film is developed, whereby side etching preventive films 4 remained by becoming non-photosensitive and insoluble are formed. Thence, etching is resumed, and before it arrives permissible limit of the rate of side etching, the etching is interrupted. The above-mentioned ethcing operation is repeated until prescribed working depth is obtained. Thereby, an etch factor B/A is made extremely large. |
| format | Patent |
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CONSTITUTION:The surface of a metal 1 formed with a chemical resistant film 2 by photographic techniques is etched to a permissible limit of rate of side etching. Next, the 2nd, for example, positive type photosensitive chemical resistant film 3 is formed over the entire surface of the metal 1 surface in the same manner as mentioned above, after which the rays R parallel to the thickness direction of the metal 1 are applied and the film is developed, whereby side etching preventive films 4 remained by becoming non-photosensitive and insoluble are formed. Thence, etching is resumed, and before it arrives permissible limit of the rate of side etching, the etching is interrupted. The above-mentioned ethcing operation is repeated until prescribed working depth is obtained. Thereby, an etch factor B/A is made extremely large.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><creationdate>1982</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820608&DB=EPODOC&CC=JP&NR=S5792177A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820608&DB=EPODOC&CC=JP&NR=S5792177A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BETSUPU SEINI</creatorcontrib><creatorcontrib>NAGATA JIYUNICHI</creatorcontrib><title>ETCHING METHOD</title><description>PURPOSE:To improve etch factors by incorporatin a process of forming a chemical resistant film by photographic techniques on side etching surfaces at the time of forming said film on non-worked parts and perform etching. CONSTITUTION:The surface of a metal 1 formed with a chemical resistant film 2 by photographic techniques is etched to a permissible limit of rate of side etching. Next, the 2nd, for example, positive type photosensitive chemical resistant film 3 is formed over the entire surface of the metal 1 surface in the same manner as mentioned above, after which the rays R parallel to the thickness direction of the metal 1 are applied and the film is developed, whereby side etching preventive films 4 remained by becoming non-photosensitive and insoluble are formed. Thence, etching is resumed, and before it arrives permissible limit of the rate of side etching, the etching is interrupted. The above-mentioned ethcing operation is repeated until prescribed working depth is obtained. Thereby, an etch factor B/A is made extremely large.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1982</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOBzDXH28PRzV_B1DfHwd-FhYE1LzClO5YXS3AwKbiAVuqkF-fGpxQWJyal5qSXxXgHBpuaWRobm5o7GRCgBAJSzHNo</recordid><startdate>19820608</startdate><enddate>19820608</enddate><creator>BETSUPU SEINI</creator><creator>NAGATA JIYUNICHI</creator><scope>EVB</scope></search><sort><creationdate>19820608</creationdate><title>ETCHING METHOD</title><author>BETSUPU SEINI ; NAGATA JIYUNICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS5792177A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1982</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><toplevel>online_resources</toplevel><creatorcontrib>BETSUPU SEINI</creatorcontrib><creatorcontrib>NAGATA JIYUNICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BETSUPU SEINI</au><au>NAGATA JIYUNICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ETCHING METHOD</title><date>1982-06-08</date><risdate>1982</risdate><abstract>PURPOSE:To improve etch factors by incorporatin a process of forming a chemical resistant film by photographic techniques on side etching surfaces at the time of forming said film on non-worked parts and perform etching. CONSTITUTION:The surface of a metal 1 formed with a chemical resistant film 2 by photographic techniques is etched to a permissible limit of rate of side etching. Next, the 2nd, for example, positive type photosensitive chemical resistant film 3 is formed over the entire surface of the metal 1 surface in the same manner as mentioned above, after which the rays R parallel to the thickness direction of the metal 1 are applied and the film is developed, whereby side etching preventive films 4 remained by becoming non-photosensitive and insoluble are formed. Thence, etching is resumed, and before it arrives permissible limit of the rate of side etching, the etching is interrupted. The above-mentioned ethcing operation is repeated until prescribed working depth is obtained. Thereby, an etch factor B/A is made extremely large.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE |
| title | ETCHING METHOD |
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