SEMICONDUCTOR DEVICE
PURPOSE:To enble secure connection with little contact bonding force and create only even and little stress inside the element, in connecting a circuit element to a mounting plate in face-down bonding structure. CONSTITUTION:A mounting plate 2 consists of an Si-plate 6, a buffer 18 of polyimide resi...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | MEGURO MASAO |
| description | PURPOSE:To enble secure connection with little contact bonding force and create only even and little stress inside the element, in connecting a circuit element to a mounting plate in face-down bonding structure. CONSTITUTION:A mounting plate 2 consists of an Si-plate 6, a buffer 18 of polyimide resin painted on the main surface, and an Au-Si-eutectic layer 9. A wiring layer 8 made of a gold-plating layer is formed on the top of the buffer 18. A connection electrode 14 corresponds to an electrode to be connected 13 of a circuit element 1. In case of connecting the circuit element to the mounting plate 2 by face-down bonding method, the electrode 13 and the electrode 14 are connected by pressing the former to the latter at 290 deg.C. Thereupon, the buffer 18 is softened by heat, and the buffer itself sinks partially at reception of intensive force as necessary, even if the surface of the electrode 13 or the electrode 14 is inadequate in flatness or uneven in thickness. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS5789229A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS5789229A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS5789229A3</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAcGm5haWRkaWjsZEKAEAUqcetA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>MEGURO MASAO</creator><creatorcontrib>MEGURO MASAO</creatorcontrib><description>PURPOSE:To enble secure connection with little contact bonding force and create only even and little stress inside the element, in connecting a circuit element to a mounting plate in face-down bonding structure. CONSTITUTION:A mounting plate 2 consists of an Si-plate 6, a buffer 18 of polyimide resin painted on the main surface, and an Au-Si-eutectic layer 9. A wiring layer 8 made of a gold-plating layer is formed on the top of the buffer 18. A connection electrode 14 corresponds to an electrode to be connected 13 of a circuit element 1. In case of connecting the circuit element to the mounting plate 2 by face-down bonding method, the electrode 13 and the electrode 14 are connected by pressing the former to the latter at 290 deg.C. Thereupon, the buffer 18 is softened by heat, and the buffer itself sinks partially at reception of intensive force as necessary, even if the surface of the electrode 13 or the electrode 14 is inadequate in flatness or uneven in thickness.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1982</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820603&DB=EPODOC&CC=JP&NR=S5789229A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820603&DB=EPODOC&CC=JP&NR=S5789229A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MEGURO MASAO</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>PURPOSE:To enble secure connection with little contact bonding force and create only even and little stress inside the element, in connecting a circuit element to a mounting plate in face-down bonding structure. CONSTITUTION:A mounting plate 2 consists of an Si-plate 6, a buffer 18 of polyimide resin painted on the main surface, and an Au-Si-eutectic layer 9. A wiring layer 8 made of a gold-plating layer is formed on the top of the buffer 18. A connection electrode 14 corresponds to an electrode to be connected 13 of a circuit element 1. In case of connecting the circuit element to the mounting plate 2 by face-down bonding method, the electrode 13 and the electrode 14 are connected by pressing the former to the latter at 290 deg.C. Thereupon, the buffer 18 is softened by heat, and the buffer itself sinks partially at reception of intensive force as necessary, even if the surface of the electrode 13 or the electrode 14 is inadequate in flatness or uneven in thickness.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1982</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAcGm5haWRkaWjsZEKAEAUqcetA</recordid><startdate>19820603</startdate><enddate>19820603</enddate><creator>MEGURO MASAO</creator><scope>EVB</scope></search><sort><creationdate>19820603</creationdate><title>SEMICONDUCTOR DEVICE</title><author>MEGURO MASAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS5789229A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1982</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MEGURO MASAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MEGURO MASAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>1982-06-03</date><risdate>1982</risdate><abstract>PURPOSE:To enble secure connection with little contact bonding force and create only even and little stress inside the element, in connecting a circuit element to a mounting plate in face-down bonding structure. CONSTITUTION:A mounting plate 2 consists of an Si-plate 6, a buffer 18 of polyimide resin painted on the main surface, and an Au-Si-eutectic layer 9. A wiring layer 8 made of a gold-plating layer is formed on the top of the buffer 18. A connection electrode 14 corresponds to an electrode to be connected 13 of a circuit element 1. In case of connecting the circuit element to the mounting plate 2 by face-down bonding method, the electrode 13 and the electrode 14 are connected by pressing the former to the latter at 290 deg.C. Thereupon, the buffer 18 is softened by heat, and the buffer itself sinks partially at reception of intensive force as necessary, even if the surface of the electrode 13 or the electrode 14 is inadequate in flatness or uneven in thickness.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPS5789229A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T22%3A12%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MEGURO%20MASAO&rft.date=1982-06-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPS5789229A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |