MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To obtain a semiconductor chip having excellent die bonding properties, by a method wherein after a semiconductor element region is formed on one main surface of a semiconductor substrate, a silicon layer is formed on the back surface. CONSTITUTION:A semiconductor element region 2 is formed on the surface of a semiconductor substrate 1, while an Si layer 3 is formed on the back surface thereof. A chip 4 obtained by dividing said semiconductor substrate is secured to a semiconductor package 5 through an Au-Si eutectic alloy layer 6. Thereby, a semiconductor chip is obtained having excellent die bonding properties in securing it to a semiconductor package.