SOLID-STATE IMAGE PICKUP ELEMENT
PURPOSE:To reduce the defects of an image by performing blooming control and increasing charge transferring ability larger than the quantity of accumulated charge of received light so as to transfer the normal quantity of charge for each picture element completely. CONSTITUTION:In each channel range...
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| creator | HIRATA YOSHIMI ISHITANI AKIYASU |
| description | PURPOSE:To reduce the defects of an image by performing blooming control and increasing charge transferring ability larger than the quantity of accumulated charge of received light so as to transfer the normal quantity of charge for each picture element completely. CONSTITUTION:In each channel range 21, the areas of an accumulation part ST (ST1, ST2) on a stage are formed so as to be larger than the areas of a transfer part TR (TR1, TR2) and a channel stop range 23 is formed between the range 21 and an overflow drain range 22. At the accumulation of received light, charge is mainly accumulated to the side of the transfer part TR by controlling the voltage applied to a transfer gate electrode and the quantity of accumulated charge is controlled by the voltage of the gate electrode. Excessive charge is absorbed into the range 22. Since the area of the accumulation part is larger than that of the transfer part, the charge transferring ability is larger than the quantity of accumulated charge of received light, transferring the charge completely. Thus, blooming control and the reduction of defective images can be performed by the said simple configuration. |
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CONSTITUTION:In each channel range 21, the areas of an accumulation part ST (ST1, ST2) on a stage are formed so as to be larger than the areas of a transfer part TR (TR1, TR2) and a channel stop range 23 is formed between the range 21 and an overflow drain range 22. At the accumulation of received light, charge is mainly accumulated to the side of the transfer part TR by controlling the voltage applied to a transfer gate electrode and the quantity of accumulated charge is controlled by the voltage of the gate electrode. Excessive charge is absorbed into the range 22. Since the area of the accumulation part is larger than that of the transfer part, the charge transferring ability is larger than the quantity of accumulated charge of received light, transferring the charge completely. Thus, blooming control and the reduction of defective images can be performed by the said simple configuration.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; SEMICONDUCTOR DEVICES</subject><creationdate>1982</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19821020&DB=EPODOC&CC=JP&NR=S57170675A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19821020&DB=EPODOC&CC=JP&NR=S57170675A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIRATA YOSHIMI</creatorcontrib><creatorcontrib>ISHITANI AKIYASU</creatorcontrib><title>SOLID-STATE IMAGE PICKUP ELEMENT</title><description>PURPOSE:To reduce the defects of an image by performing blooming control and increasing charge transferring ability larger than the quantity of accumulated charge of received light so as to transfer the normal quantity of charge for each picture element completely. CONSTITUTION:In each channel range 21, the areas of an accumulation part ST (ST1, ST2) on a stage are formed so as to be larger than the areas of a transfer part TR (TR1, TR2) and a channel stop range 23 is formed between the range 21 and an overflow drain range 22. At the accumulation of received light, charge is mainly accumulated to the side of the transfer part TR by controlling the voltage applied to a transfer gate electrode and the quantity of accumulated charge is controlled by the voltage of the gate electrode. Excessive charge is absorbed into the range 22. Since the area of the accumulation part is larger than that of the transfer part, the charge transferring ability is larger than the quantity of accumulated charge of received light, transferring the charge completely. Thus, blooming control and the reduction of defective images can be performed by the said simple configuration.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1982</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAI9vfxdNENDnEMcVXw9HV0d1UI8HT2Dg1QcPVx9XX1C-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAcGm5obmBmbmpo7GxKgBAPWjIi0</recordid><startdate>19821020</startdate><enddate>19821020</enddate><creator>HIRATA YOSHIMI</creator><creator>ISHITANI AKIYASU</creator><scope>EVB</scope></search><sort><creationdate>19821020</creationdate><title>SOLID-STATE IMAGE PICKUP ELEMENT</title><author>HIRATA YOSHIMI ; ISHITANI AKIYASU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS57170675A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1982</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PICTORIAL COMMUNICATION, e.g. TELEVISION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HIRATA YOSHIMI</creatorcontrib><creatorcontrib>ISHITANI AKIYASU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIRATA YOSHIMI</au><au>ISHITANI AKIYASU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SOLID-STATE IMAGE PICKUP ELEMENT</title><date>1982-10-20</date><risdate>1982</risdate><abstract>PURPOSE:To reduce the defects of an image by performing blooming control and increasing charge transferring ability larger than the quantity of accumulated charge of received light so as to transfer the normal quantity of charge for each picture element completely. CONSTITUTION:In each channel range 21, the areas of an accumulation part ST (ST1, ST2) on a stage are formed so as to be larger than the areas of a transfer part TR (TR1, TR2) and a channel stop range 23 is formed between the range 21 and an overflow drain range 22. At the accumulation of received light, charge is mainly accumulated to the side of the transfer part TR by controlling the voltage applied to a transfer gate electrode and the quantity of accumulated charge is controlled by the voltage of the gate electrode. Excessive charge is absorbed into the range 22. Since the area of the accumulation part is larger than that of the transfer part, the charge transferring ability is larger than the quantity of accumulated charge of received light, transferring the charge completely. Thus, blooming control and the reduction of defective images can be performed by the said simple configuration.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
| title | SOLID-STATE IMAGE PICKUP ELEMENT |
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