SEMICONDUCTOR DEVICE

PURPOSE:To obtain a high performance C-MOS.IC by a method wherein an N channel transistor and a P channel transistor are built in different substrates and the transistors enjoy a roughly equal mobility or the mobility ratio between the two is devised to approach the quantity one. CONSTITUTION:An N t...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	OOSONE TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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