33TRANSISTOR STATIC MEMORY ELEMENT

A three-transistor storage element is disclosed which includes a first load element, a first field effect transistor and a second load element connected in series between first and second terminal lines of a voltage supply. Node points are located at opposite ends of the first transistor in the series path between the first load element and the first transistor and between the second load element and the first transistor. A second field effect transistor is connected between the first terminal line and the second node point. The gate of said second transistor is connected to the first node point. The gate of the first transistor is connected to a reference voltage. An address field effect transistor is connected between a bit line and the second node point and the gate of said address transistor is connected to a word line. A modified form of this storage element is one in which the load elements are in the form of fourth and fifth field effect transistors. The gates of these fourth and fifth field effect transistors are connected to the source of each of the fourth and fifth transistors, respectively. A third form of the present invention has the gates of the address transistor and the gate of the first transistor connected together and to the word line. A fourth form of the invention has the gates of the first and fifth transistors and the address transistor connected together to the word line.