METHOD FOR MANUFACTURING MEMORY CELL IN DRAM

METHOD FOR MANUFACTURING MEMORY CELL IN DRAM

PROBLEM TO BE SOLVED: To improve damages in deep node contact etching and reduce the number of mask processes for an ordinary landing pad process. SOLUTION: A conductive plug 20 is formed in a contact hole which is opened in an insulation layer 18 by a two-step etching consisting of isotropic etchin...

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Hauptverfasser: BIN RIU, ENNSEN RIN, UENNJIYA RIAN
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve damages in deep node contact etching and reduce the number of mask processes for an ordinary landing pad process. SOLUTION: A conductive plug 20 is formed in a contact hole which is opened in an insulation layer 18 by a two-step etching consisting of isotropic etching after selection etching. A contact hole is formed through insulation layers 22, 28 and bit lines 24, 26 thereon, and a spacer 30 is formed in the inner wall. Techniques of an infer-plug forming a capacitor having a storage node connected to the plug 20 through the contact hole and a nitride sidewall spacer are utilized. Thereby, the contact hole for the storage node having an aspect ratio can be formed simply.