PLASMA-ASHING METHOD

PROBLEM TO BE SOLVED: To attain the ashing of a resist film whose surface layer is hardened and converted, and to attain the ashing of the resist film without giving damages to a substrate. SOLUTION: A substrate 1 to which a resist film is applied is provided in a evacuated processing chamber 4, and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKADA TOSHINARI, KIKUCHI MASASHI, WATABE TOKUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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