PLASMA-ASHING METHOD

PROBLEM TO BE SOLVED: To attain the ashing of a resist film whose surface layer is hardened and converted, and to attain the ashing of the resist film without giving damages to a substrate. SOLUTION: A substrate 1 to which a resist film is applied is provided in a evacuated processing chamber 4, and a vacuum air discharge outlet and a reactive gas inlet port equipped with a heating means for heating the substrate and a plasma-generating device 9 are provided in the vacuum-processing chamber. This is a method for removing the resist film of the substrate by operating the ashing of the resist film by plasma. A front electrode 13 is provided on the front face of the substrate so as to be faced with an interval in which plasma can be generated, and a rear electrode 16 is provided on the back face of the substrate so as to be faced with an interval in which plasma does not generate. Then, one of the electrodes is connected with a high-frequency power source, the other electrode is connected with ground, the etching of the surface layer of the resist film is carried out, both the electrodes are grounded, the generator is operated, and the ashing of the resist film on the substrate is attained by plasma.