FERROELECTRIC MEMORY DEVICE
PROBLEM TO BE SOLVED: To increase the memory capacity of a ferroelectric memory device without changing the number of memory cells, by providing the device with a control circuit, which executes a writing operation of information of at least 3 values or above. SOLUTION: The control circuit 106 for w...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!