DEPOSITION APPARATUS
PROBLEM TO BE SOLVED: To decrease the variation in the film thickness of a formed thin film and to improve a film thickness distribution by disposing a shower plate which is nonuniform in plate thickness between a workpiece on a table disposed in a reaction magnet 12 and a reaction gas supply means....
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| creator | ONOE SEIJI |
| description | PROBLEM TO BE SOLVED: To decrease the variation in the film thickness of a formed thin film and to improve a film thickness distribution by disposing a shower plate which is nonuniform in plate thickness between a workpiece on a table disposed in a reaction magnet 12 and a reaction gas supply means. SOLUTION: A glass substrate 2 is held on a substrate stage 3 in common use as a lower electrode opposite to a gas supply section 4 in the central part of the upper wall and the shower plate 7 which is made of aluminum and has many microholes 8 (0.1 to 1.0 mm diameter) is disposed between this substrate and an upper electrode 6. Deposition is first executed by using the shower plate 7 having a uniform thickness and the shower plate 7 is worked according to the resulted film thickness distribution in such a manner that the plate thickness is largest in the central part and is linearly gradually reduced toward the periphery. Since the gas flow rate and the thickness of the thin film deposited on the glass substrate 2 are nearly in a proportional relation, the shower plate 7 of the portion where the thickness of the thin portion is desired to be increased by as much as this portion, by which the accurate film thickness control is made possible. |
| format | Patent |
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SOLUTION: A glass substrate 2 is held on a substrate stage 3 in common use as a lower electrode opposite to a gas supply section 4 in the central part of the upper wall and the shower plate 7 which is made of aluminum and has many microholes 8 (0.1 to 1.0 mm diameter) is disposed between this substrate and an upper electrode 6. Deposition is first executed by using the shower plate 7 having a uniform thickness and the shower plate 7 is worked according to the resulted film thickness distribution in such a manner that the plate thickness is largest in the central part and is linearly gradually reduced toward the periphery. Since the gas flow rate and the thickness of the thin film deposited on the glass substrate 2 are nearly in a proportional relation, the shower plate 7 of the portion where the thickness of the thin portion is desired to be increased by as much as this portion, by which the accurate film thickness control is made possible.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19991221&DB=EPODOC&CC=JP&NR=H11350143A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19991221&DB=EPODOC&CC=JP&NR=H11350143A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ONOE SEIJI</creatorcontrib><title>DEPOSITION APPARATUS</title><description>PROBLEM TO BE SOLVED: To decrease the variation in the film thickness of a formed thin film and to improve a film thickness distribution by disposing a shower plate which is nonuniform in plate thickness between a workpiece on a table disposed in a reaction magnet 12 and a reaction gas supply means. SOLUTION: A glass substrate 2 is held on a substrate stage 3 in common use as a lower electrode opposite to a gas supply section 4 in the central part of the upper wall and the shower plate 7 which is made of aluminum and has many microholes 8 (0.1 to 1.0 mm diameter) is disposed between this substrate and an upper electrode 6. Deposition is first executed by using the shower plate 7 having a uniform thickness and the shower plate 7 is worked according to the resulted film thickness distribution in such a manner that the plate thickness is largest in the central part and is linearly gradually reduced toward the periphery. Since the gas flow rate and the thickness of the thin film deposited on the glass substrate 2 are nearly in a proportional relation, the shower plate 7 of the portion where the thickness of the thin portion is desired to be increased by as much as this portion, by which the accurate film thickness control is made possible.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBBxcQ3wD_YM8fT3U3AMCHAMcgwJDeZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR6GhsamBoYmxo7GxKgBAJCCHvA</recordid><startdate>19991221</startdate><enddate>19991221</enddate><creator>ONOE SEIJI</creator><scope>EVB</scope></search><sort><creationdate>19991221</creationdate><title>DEPOSITION APPARATUS</title><author>ONOE SEIJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11350143A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ONOE SEIJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ONOE SEIJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEPOSITION APPARATUS</title><date>1999-12-21</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To decrease the variation in the film thickness of a formed thin film and to improve a film thickness distribution by disposing a shower plate which is nonuniform in plate thickness between a workpiece on a table disposed in a reaction magnet 12 and a reaction gas supply means. SOLUTION: A glass substrate 2 is held on a substrate stage 3 in common use as a lower electrode opposite to a gas supply section 4 in the central part of the upper wall and the shower plate 7 which is made of aluminum and has many microholes 8 (0.1 to 1.0 mm diameter) is disposed between this substrate and an upper electrode 6. Deposition is first executed by using the shower plate 7 having a uniform thickness and the shower plate 7 is worked according to the resulted film thickness distribution in such a manner that the plate thickness is largest in the central part and is linearly gradually reduced toward the periphery. Since the gas flow rate and the thickness of the thin film deposited on the glass substrate 2 are nearly in a proportional relation, the shower plate 7 of the portion where the thickness of the thin portion is desired to be increased by as much as this portion, by which the accurate film thickness control is made possible.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | DEPOSITION APPARATUS |
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