MANUFACTURE OF TRANSPARENT CONDUCTIVE FILM AND PHOTOSENSOR ELEMENT
PROBLEM TO BE SOLVED: To form a transparent conductive film at a low temp. and to enable a reinforced glass to be directly used for a substrate, by forming a crystalline transparent conductive film by the chemical vapor deposition on C based material-made C layer regions provided on a substrate. SOL...
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| creator | YAMAMOTO TAKESHI MATSUMI SHIN HAKU HISAO |
| description | PROBLEM TO BE SOLVED: To form a transparent conductive film at a low temp. and to enable a reinforced glass to be directly used for a substrate, by forming a crystalline transparent conductive film by the chemical vapor deposition on C based material-made C layer regions provided on a substrate. SOLUTION: C based material-made C layer regions 11 are dispersedly provided on a glass substrate 1, and a tin oxide-made transparent conductive film 2 having a rough surface is formed on the reinforcing glass 1 by atmospheric pressure thermal chemical vapor deposition method(CVD). A p-type amorphous Si(a-Si) layer 3, i-type a-Si layer 4 and n-type a-Si or microcrystalline Si layer 5 to be an optical active layer are formed on the transparent conductive film 2 by a vapor phase deposition method such as plasma CVD or photo CVD method, and an Ag back electrode 7 is provided through an ITO film 6 to be a diffusion blocking layer on the n-type a-Si layer 5 to form a thin film photosensor element. |
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SOLUTION: C based material-made C layer regions 11 are dispersedly provided on a glass substrate 1, and a tin oxide-made transparent conductive film 2 having a rough surface is formed on the reinforcing glass 1 by atmospheric pressure thermal chemical vapor deposition method(CVD). A p-type amorphous Si(a-Si) layer 3, i-type a-Si layer 4 and n-type a-Si or microcrystalline Si layer 5 to be an optical active layer are formed on the transparent conductive film 2 by a vapor phase deposition method such as plasma CVD or photo CVD method, and an Ag back electrode 7 is provided through an ITO film 6 to be a diffusion blocking layer on the n-type a-Si layer 5 to form a thin film photosensor element.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19991015&DB=EPODOC&CC=JP&NR=H11284208A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19991015&DB=EPODOC&CC=JP&NR=H11284208A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAMOTO TAKESHI</creatorcontrib><creatorcontrib>MATSUMI SHIN</creatorcontrib><creatorcontrib>HAKU HISAO</creatorcontrib><title>MANUFACTURE OF TRANSPARENT CONDUCTIVE FILM AND PHOTOSENSOR ELEMENT</title><description>PROBLEM TO BE SOLVED: To form a transparent conductive film at a low temp. and to enable a reinforced glass to be directly used for a substrate, by forming a crystalline transparent conductive film by the chemical vapor deposition on C based material-made C layer regions provided on a substrate. SOLUTION: C based material-made C layer regions 11 are dispersedly provided on a glass substrate 1, and a tin oxide-made transparent conductive film 2 having a rough surface is formed on the reinforcing glass 1 by atmospheric pressure thermal chemical vapor deposition method(CVD). A p-type amorphous Si(a-Si) layer 3, i-type a-Si layer 4 and n-type a-Si or microcrystalline Si layer 5 to be an optical active layer are formed on the transparent conductive film 2 by a vapor phase deposition method such as plasma CVD or photo CVD method, and an Ag back electrode 7 is provided through an ITO film 6 to be a diffusion blocking layer on the n-type a-Si layer 5 to form a thin film photosensor element.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDydfQLdXN0DgkNclXwd1MICXL0Cw5wDHL1C1Fw9vdzCXUO8QxzVXDz9PFVcPRzUQjw8A_xD3b1C_YPUnD1cfUFquNhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR6GhkYWJkYGFo7GxKgBAC_CK74</recordid><startdate>19991015</startdate><enddate>19991015</enddate><creator>YAMAMOTO TAKESHI</creator><creator>MATSUMI SHIN</creator><creator>HAKU HISAO</creator><scope>EVB</scope></search><sort><creationdate>19991015</creationdate><title>MANUFACTURE OF TRANSPARENT CONDUCTIVE FILM AND PHOTOSENSOR ELEMENT</title><author>YAMAMOTO TAKESHI ; MATSUMI SHIN ; HAKU HISAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11284208A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAMOTO TAKESHI</creatorcontrib><creatorcontrib>MATSUMI SHIN</creatorcontrib><creatorcontrib>HAKU HISAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAMOTO TAKESHI</au><au>MATSUMI SHIN</au><au>HAKU HISAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURE OF TRANSPARENT CONDUCTIVE FILM AND PHOTOSENSOR ELEMENT</title><date>1999-10-15</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To form a transparent conductive film at a low temp. and to enable a reinforced glass to be directly used for a substrate, by forming a crystalline transparent conductive film by the chemical vapor deposition on C based material-made C layer regions provided on a substrate. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | MANUFACTURE OF TRANSPARENT CONDUCTIVE FILM AND PHOTOSENSOR ELEMENT |
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