METHOD FOR GROWING CRYSTAL OF OXIDE THIN FILM
PROBLEM TO BE SOLVED: To prevent the excess and shortage of the compsn. of bismuth which is one of the structural elements and to grow a Bi2 Sr2 Can Cun+1 O6+2n oxide thin film of high quality. SOLUTION: In a method for growing crystals in a Bi2 Sr2 Can Cun+1 O6+2n oxide thin film 304 by using a vap...
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| creator | SAKAI SHIGEKI UDA SHINJI |
| description | PROBLEM TO BE SOLVED: To prevent the excess and shortage of the compsn. of bismuth which is one of the structural elements and to grow a Bi2 Sr2 Can Cun+1 O6+2n oxide thin film of high quality. SOLUTION: In a method for growing crystals in a Bi2 Sr2 Can Cun+1 O6+2n oxide thin film 304 by using a vapor growth method, as a primary stage, the crystals of a Bi2 Sr2 CuO6 oxide thin film 302 is grown on a base 301 by a method for growing the crystals of a polypyletic oxide thin film contg. bismuth as a structural element, as a secondary stage, calcium atoms and copper atoms respectively by the quantity of n/2 of the atomic number of strontium contained in the thin film 302 are deposited on the thin film 302 to form an atom-deposited layer, and as a third stage, the Bi2 Sr2 CuO6 oxide thin film 302 is brought to react with the calcium atoms and copper atoms to grow the crystals of the Bi2 Sr2 Can Cun+1 O6+2n oxide thin film 304. |
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SOLUTION: In a method for growing crystals in a Bi2 Sr2 Can Cun+1 O6+2n oxide thin film 304 by using a vapor growth method, as a primary stage, the crystals of a Bi2 Sr2 CuO6 oxide thin film 302 is grown on a base 301 by a method for growing the crystals of a polypyletic oxide thin film contg. bismuth as a structural element, as a secondary stage, calcium atoms and copper atoms respectively by the quantity of n/2 of the atomic number of strontium contained in the thin film 302 are deposited on the thin film 302 to form an atom-deposited layer, and as a third stage, the Bi2 Sr2 CuO6 oxide thin film 302 is brought to react with the calcium atoms and copper atoms to grow the crystals of the Bi2 Sr2 Can Cun+1 O6+2n oxide thin film 304.</description><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; CONDUCTORS ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; INSULATORS ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19991012&DB=EPODOC&CC=JP&NR=H11279763A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19991012&DB=EPODOC&CC=JP&NR=H11279763A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAKAI SHIGEKI</creatorcontrib><creatorcontrib>UDA SHINJI</creatorcontrib><title>METHOD FOR GROWING CRYSTAL OF OXIDE THIN FILM</title><description>PROBLEM TO BE SOLVED: To prevent the excess and shortage of the compsn. of bismuth which is one of the structural elements and to grow a Bi2 Sr2 Can Cun+1 O6+2n oxide thin film of high quality. 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UDA SHINJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11279763A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>CONDUCTORS</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SAKAI SHIGEKI</creatorcontrib><creatorcontrib>UDA SHINJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAKAI SHIGEKI</au><au>UDA SHINJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR GROWING CRYSTAL OF OXIDE THIN FILM</title><date>1999-10-12</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To prevent the excess and shortage of the compsn. of bismuth which is one of the structural elements and to grow a Bi2 Sr2 Can Cun+1 O6+2n oxide thin film of high quality. SOLUTION: In a method for growing crystals in a Bi2 Sr2 Can Cun+1 O6+2n oxide thin film 304 by using a vapor growth method, as a primary stage, the crystals of a Bi2 Sr2 CuO6 oxide thin film 302 is grown on a base 301 by a method for growing the crystals of a polypyletic oxide thin film contg. bismuth as a structural element, as a secondary stage, calcium atoms and copper atoms respectively by the quantity of n/2 of the atomic number of strontium contained in the thin film 302 are deposited on the thin film 302 to form an atom-deposited layer, and as a third stage, the Bi2 Sr2 CuO6 oxide thin film 302 is brought to react with the calcium atoms and copper atoms to grow the crystals of the Bi2 Sr2 Can Cun+1 O6+2n oxide thin film 304.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONDUCTORS CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR GROWING CRYSTAL OF OXIDE THIN FILM |
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