SEMICONDUCTOR STORAGE DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can monitor internal signals in the mold state. SOLUTION: A test signal generator circuit 40 generates test signals. In response to a test signal, a monitor circuit 20 realizes a condition in which a node N1 through which a sense...

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1. Verfasser:	ICHIGUCHI TETSUICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS STATIC STORES TESTING
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creator	ICHIGUCHI TETSUICHIRO
description	PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can monitor internal signals in the mold state. SOLUTION: A test signal generator circuit 40 generates test signals. In response to a test signal, a monitor circuit 20 realizes a condition in which a node N1 through which a sense amplifier activating signal So passes, a node N2 through which a column decoder activating signal CDE passes, or a node N3 through which the output control signal OEM passes is connected with the /WE pin. On the other hand, an output control circuit 55 receives the write enable signal /WE at the H level from a control circuit 30 at the time of the test mode of an internal signal monitor. By this, it is possible to monitor internal signals about the access path from the /WE pin.
format	Patent
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In response to a test signal, a monitor circuit 20 realizes a condition in which a node N1 through which a sense amplifier activating signal So passes, a node N2 through which a column decoder activating signal CDE passes, or a node N3 through which the output control signal OEM passes is connected with the /WE pin. On the other hand, an output control circuit 55 receives the write enable signal /WE at the H level from a control circuit 30 at the time of the test mode of an internal signal monitor. By this, it is possible to monitor internal signals about the access path from the /WE pin.</description><edition>6</edition><language>eng</language><subject>INFORMATION STORAGE ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; STATIC STORES ; TESTING</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990129&DB=EPODOC&CC=JP&NR=H1125699A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990129&DB=EPODOC&CC=JP&NR=H1125699A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ICHIGUCHI TETSUICHIRO</creatorcontrib><title>SEMICONDUCTOR STORAGE DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can monitor internal signals in the mold state. 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By this, it is possible to monitor internal signals about the access path from the /WE pin.</description><subject>INFORMATION STORAGE</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAJdvX1dPb3cwl1DvEPUggGEo7urgourmGezq48DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeK8DD0NDI1MzS0tGYCCUASLkgyQ</recordid><startdate>19990129</startdate><enddate>19990129</enddate><creator>ICHIGUCHI TETSUICHIRO</creator><scope>EVB</scope></search><sort><creationdate>19990129</creationdate><title>SEMICONDUCTOR STORAGE DEVICE</title><author>ICHIGUCHI TETSUICHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH1125699A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>INFORMATION STORAGE</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ICHIGUCHI TETSUICHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ICHIGUCHI TETSUICHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR STORAGE DEVICE</title><date>1999-01-29</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can monitor internal signals in the mold state. SOLUTION: A test signal generator circuit 40 generates test signals. In response to a test signal, a monitor circuit 20 realizes a condition in which a node N1 through which a sense amplifier activating signal So passes, a node N2 through which a column decoder activating signal CDE passes, or a node N3 through which the output control signal OEM passes is connected with the /WE pin. On the other hand, an output control circuit 55 receives the write enable signal /WE at the H level from a control circuit 30 at the time of the test mode of an internal signal monitor. By this, it is possible to monitor internal signals about the access path from the /WE pin.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects	INFORMATION STORAGE MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS STATIC STORES TESTING
title	SEMICONDUCTOR STORAGE DEVICE
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