LOW VOLTAGE DEVICE WHICH CAN OPERATE WITH HIGH SUPPLY VOLTAGE POWER
PROBLEM TO BE SOLVED: To provide exchangeability by pin to pin in a board with a device operable with considerably high voltages and corresponding to an initial generation by containing a voltage reducing unit connected between an outer voltage power source and the first group of a plurality of tran...
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creator | ORBACH ZVI YOELI UZI |
description | PROBLEM TO BE SOLVED: To provide exchangeability by pin to pin in a board with a device operable with considerably high voltages and corresponding to an initial generation by containing a voltage reducing unit connected between an outer voltage power source and the first group of a plurality of transistors with a mutual connection structure. SOLUTION: A metal ring 20 is connected to a metal ring 22 via a plurality of voltage reducing units 25 containing several transistors. A plurality of transistors receive electric signals from an I/O cell. An N transistor 30 contains a gate 32, a source 34 and a drain 36. The source 34 is connected to the outer ring 20 and the drain to the inner ring 22. The gate 32 is connected to the outer ring 20 via a voltage divider 38. The N transistor 30 has a comparatively large W/L ratio, the W/L ratio exceeding 1000, if possible, and it can be executed as a plurality of transistors connected in parallel. |
format | Patent |
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SOLUTION: A metal ring 20 is connected to a metal ring 22 via a plurality of voltage reducing units 25 containing several transistors. A plurality of transistors receive electric signals from an I/O cell. An N transistor 30 contains a gate 32, a source 34 and a drain 36. The source 34 is connected to the outer ring 20 and the drain to the inner ring 22. The gate 32 is connected to the outer ring 20 via a voltage divider 38. The N transistor 30 has a comparatively large W/L ratio, the W/L ratio exceeding 1000, if possible, and it can be executed as a plurality of transistors connected in parallel.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990806&DB=EPODOC&CC=JP&NR=H11214624A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990806&DB=EPODOC&CC=JP&NR=H11214624A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ORBACH ZVI</creatorcontrib><creatorcontrib>YOELI UZI</creatorcontrib><title>LOW VOLTAGE DEVICE WHICH CAN OPERATE WITH HIGH SUPPLY VOLTAGE POWER</title><description>PROBLEM TO BE SOLVED: To provide exchangeability by pin to pin in a board with a device operable with considerably high voltages and corresponding to an initial generation by containing a voltage reducing unit connected between an outer voltage power source and the first group of a plurality of transistors with a mutual connection structure. SOLUTION: A metal ring 20 is connected to a metal ring 22 via a plurality of voltage reducing units 25 containing several transistors. A plurality of transistors receive electric signals from an I/O cell. An N transistor 30 contains a gate 32, a source 34 and a drain 36. The source 34 is connected to the outer ring 20 and the drain to the inner ring 22. The gate 32 is connected to the outer ring 20 via a voltage divider 38. The N transistor 30 has a comparatively large W/L ratio, the W/L ratio exceeding 1000, if possible, and it can be executed as a plurality of transistors connected in parallel.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD28Q9XCPP3CXF0d1VwcQ3zdHZVCPfwdPZQcHb0U_APcA1yDAGKeIZ4KHh4unsoBIcGBPhEwnUE-Ie7BvEwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknivAA9DQyNDEzMjE0djYtQAAB2kK4c</recordid><startdate>19990806</startdate><enddate>19990806</enddate><creator>ORBACH ZVI</creator><creator>YOELI UZI</creator><scope>EVB</scope></search><sort><creationdate>19990806</creationdate><title>LOW VOLTAGE DEVICE WHICH CAN OPERATE WITH HIGH SUPPLY VOLTAGE POWER</title><author>ORBACH ZVI ; YOELI UZI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11214624A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ORBACH ZVI</creatorcontrib><creatorcontrib>YOELI UZI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ORBACH ZVI</au><au>YOELI UZI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LOW VOLTAGE DEVICE WHICH CAN OPERATE WITH HIGH SUPPLY VOLTAGE POWER</title><date>1999-08-06</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To provide exchangeability by pin to pin in a board with a device operable with considerably high voltages and corresponding to an initial generation by containing a voltage reducing unit connected between an outer voltage power source and the first group of a plurality of transistors with a mutual connection structure. SOLUTION: A metal ring 20 is connected to a metal ring 22 via a plurality of voltage reducing units 25 containing several transistors. A plurality of transistors receive electric signals from an I/O cell. An N transistor 30 contains a gate 32, a source 34 and a drain 36. The source 34 is connected to the outer ring 20 and the drain to the inner ring 22. The gate 32 is connected to the outer ring 20 via a voltage divider 38. The N transistor 30 has a comparatively large W/L ratio, the W/L ratio exceeding 1000, if possible, and it can be executed as a plurality of transistors connected in parallel.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | LOW VOLTAGE DEVICE WHICH CAN OPERATE WITH HIGH SUPPLY VOLTAGE POWER |
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