SEMICONDUCTOR ACCELERATION SENSOR AND MANUFACTURE THEREOF
PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor which capable of reducing fluctuations in hinge thickness to reduce variations in detection sensitivity. SOLUTION: In a semiconductor acceleration sensor including a semiconductor substrate 21 having a frame 11, an overlap 12 and a...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | FUNAHASHI HIDEO |
description | PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor which capable of reducing fluctuations in hinge thickness to reduce variations in detection sensitivity. SOLUTION: In a semiconductor acceleration sensor including a semiconductor substrate 21 having a frame 11, an overlap 12 and a hinge 13 are integrally formed therein, the silicon substrate 21 is etched to form hinge parts 23. Thereafter, the hinge parts 23 are heated and oxidized to form oxidation films 24a and 24b having a predetermined thickness. The oxidation films 24a and 24b thus formed are etched and removed to form a hinge 13. The reproducibility of the oxidation film thickness by thermal oxidization is extremely satisfactory, and thus a thickness T1 of the hinge 13 can be accurately adjusted to target value. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH11186565A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH11186565A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH11186565A3</originalsourceid><addsrcrecordid>eNrjZLAMdvX1dPb3cwl1DvEPUnB0dnb1cQ1yDPH091MIdvULBon5uSj4OvqFujk6h4QGuSqEeLgGufq78TCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeK8AD0NDQwszUzNTR2Ni1AAAtFEpQg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR ACCELERATION SENSOR AND MANUFACTURE THEREOF</title><source>esp@cenet</source><creator>FUNAHASHI HIDEO</creator><creatorcontrib>FUNAHASHI HIDEO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor which capable of reducing fluctuations in hinge thickness to reduce variations in detection sensitivity. SOLUTION: In a semiconductor acceleration sensor including a semiconductor substrate 21 having a frame 11, an overlap 12 and a hinge 13 are integrally formed therein, the silicon substrate 21 is etched to form hinge parts 23. Thereafter, the hinge parts 23 are heated and oxidized to form oxidation films 24a and 24b having a predetermined thickness. The oxidation films 24a and 24b thus formed are etched and removed to form a hinge 13. The reproducibility of the oxidation film thickness by thermal oxidization is extremely satisfactory, and thus a thickness T1 of the hinge 13 can be accurately adjusted to target value.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT ; MEASURING ; MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990709&DB=EPODOC&CC=JP&NR=H11186565A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990709&DB=EPODOC&CC=JP&NR=H11186565A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUNAHASHI HIDEO</creatorcontrib><title>SEMICONDUCTOR ACCELERATION SENSOR AND MANUFACTURE THEREOF</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor which capable of reducing fluctuations in hinge thickness to reduce variations in detection sensitivity. SOLUTION: In a semiconductor acceleration sensor including a semiconductor substrate 21 having a frame 11, an overlap 12 and a hinge 13 are integrally formed therein, the silicon substrate 21 is etched to form hinge parts 23. Thereafter, the hinge parts 23 are heated and oxidized to form oxidation films 24a and 24b having a predetermined thickness. The oxidation films 24a and 24b thus formed are etched and removed to form a hinge 13. The reproducibility of the oxidation film thickness by thermal oxidization is extremely satisfactory, and thus a thickness T1 of the hinge 13 can be accurately adjusted to target value.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT</subject><subject>MEASURING</subject><subject>MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMdvX1dPb3cwl1DvEPUnB0dnb1cQ1yDPH091MIdvULBon5uSj4OvqFujk6h4QGuSqEeLgGufq78TCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeK8AD0NDQwszUzNTR2Ni1AAAtFEpQg</recordid><startdate>19990709</startdate><enddate>19990709</enddate><creator>FUNAHASHI HIDEO</creator><scope>EVB</scope></search><sort><creationdate>19990709</creationdate><title>SEMICONDUCTOR ACCELERATION SENSOR AND MANUFACTURE THEREOF</title><author>FUNAHASHI HIDEO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11186565A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT</topic><topic>MEASURING</topic><topic>MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>FUNAHASHI HIDEO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUNAHASHI HIDEO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR ACCELERATION SENSOR AND MANUFACTURE THEREOF</title><date>1999-07-09</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor which capable of reducing fluctuations in hinge thickness to reduce variations in detection sensitivity. SOLUTION: In a semiconductor acceleration sensor including a semiconductor substrate 21 having a frame 11, an overlap 12 and a hinge 13 are integrally formed therein, the silicon substrate 21 is etched to form hinge parts 23. Thereafter, the hinge parts 23 are heated and oxidized to form oxidation films 24a and 24b having a predetermined thickness. The oxidation films 24a and 24b thus formed are etched and removed to form a hinge 13. The reproducibility of the oxidation film thickness by thermal oxidization is extremely satisfactory, and thus a thickness T1 of the hinge 13 can be accurately adjusted to target value.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_JPH11186565A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK PHYSICS SEMICONDUCTOR DEVICES TESTING |
title | SEMICONDUCTOR ACCELERATION SENSOR AND MANUFACTURE THEREOF |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T01%3A54%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FUNAHASHI%20HIDEO&rft.date=1999-07-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH11186565A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |