MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device provided with a self-aligned contact, which is capable of lessening gate electrodes in gap between them without generating recesses on a semiconductor substrate, reducing source/drain diffusion layers in impurity conce...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KUROKAWA ATSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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