MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device provided with a self-aligned contact, which is capable of lessening gate electrodes in gap between them without generating recesses on a semiconductor substrate, reducing source/drain diffusion layers in impurity concentration, and restraining the diffusion layers from being diffused at a high speed. SOLUTION: A first wiring A and an offset insulating film 22a are formed on a semiconductor substrate 10, the offset insulating film 22a is coated, a first etching stopper film 23 is formed, a low-concentration diffusion layer 11 is formed using the first wiring A as a mask, the semiconductor substrate 10 is thermally treated through a high-speed annealing method, a sidewall mask layer 25a is formed confronting the sidewall of the first wiring A and the offset insulating film 22a, a high-concentration diffusion layer 12 is formed using the sidewalls mask layer 25a as a mask, the sidewall mask layer 25a is removed, an insulating film 27 is formed on all the surface of the first etching stopper film, and a contact hole CH1 is bored in the insulating film 27 to reach to the high-concentration diffusion layer 12.