PRODUCTION OF BISMUTH-CONTAINING CERAMIC LAYER
PROBLEM TO BE SOLVED: To eliminate the problem of aging of a starting soln. such as colloid formation and to form a ferroelectric ceramic layer by dissolving a Bi-contg. precursor in a specified org. acid, dissolving other precursor in other solvent, applying the resultant solns. on a substrate and...
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creator | MAZURE-ESPEJO CARLOS HINTERMAIER FRANK DR |
description | PROBLEM TO BE SOLVED: To eliminate the problem of aging of a starting soln. such as colloid formation and to form a ferroelectric ceramic layer by dissolving a Bi-contg. precursor in a specified org. acid, dissolving other precursor in other solvent, applying the resultant solns. on a substrate and heating them. SOLUTION: A Bi-contg. precursor is dissolved in an org. acid of the formula Cn H2n+1 COOH [(n) is 0-2] and, optionally, water. Other precursor is dissolved in other solvent such as THF. The resultant solns. are applied on a substrate and heated to form the objective ceramic layer. An org. acid of the formula Cn H2n+1 COOH [where (n) is 0-2] and, optionally, water are preferably used as the other solvent and it is further preferable that all the precursors are dissolved in the same org. acid. Salts of org. acids, oxides, ethoxides or methoxides are preferably used as the precursors. |
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SOLUTION: A Bi-contg. precursor is dissolved in an org. acid of the formula Cn H2n+1 COOH [(n) is 0-2] and, optionally, water. Other precursor is dissolved in other solvent such as THF. The resultant solns. are applied on a substrate and heated to form the objective ceramic layer. An org. acid of the formula Cn H2n+1 COOH [where (n) is 0-2] and, optionally, water are preferably used as the other solvent and it is further preferable that all the precursors are dissolved in the same org. acid. Salts of org. acids, oxides, ethoxides or methoxides are preferably used as the precursors.</description><edition>6</edition><language>eng</language><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; PERFORMING OPERATIONS ; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; SEMICONDUCTOR DEVICES ; SPRAYING OR ATOMISING IN GENERAL ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990629&DB=EPODOC&CC=JP&NR=H11171546A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990629&DB=EPODOC&CC=JP&NR=H11171546A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAZURE-ESPEJO CARLOS</creatorcontrib><creatorcontrib>HINTERMAIER FRANK DR</creatorcontrib><title>PRODUCTION OF BISMUTH-CONTAINING CERAMIC LAYER</title><description>PROBLEM TO BE SOLVED: To eliminate the problem of aging of a starting soln. such as colloid formation and to form a ferroelectric ceramic layer by dissolving a Bi-contg. precursor in a specified org. acid, dissolving other precursor in other solvent, applying the resultant solns. on a substrate and heating them. SOLUTION: A Bi-contg. precursor is dissolved in an org. acid of the formula Cn H2n+1 COOH [(n) is 0-2] and, optionally, water. Other precursor is dissolved in other solvent such as THF. The resultant solns. are applied on a substrate and heated to form the objective ceramic layer. An org. acid of the formula Cn H2n+1 COOH [where (n) is 0-2] and, optionally, water are preferably used as the other solvent and it is further preferable that all the precursors are dissolved in the same org. acid. Salts of org. acids, oxides, ethoxides or methoxides are preferably used as the precursors.</description><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALCPJ3CXUO8fT3U_B3U3DyDPYNDfHQdfb3C3H09PP0c1dwdg1y9PV0VvBxjHQN4mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHoaGhuaGpiZmjsbEqAEA-E0mCw</recordid><startdate>19990629</startdate><enddate>19990629</enddate><creator>MAZURE-ESPEJO CARLOS</creator><creator>HINTERMAIER FRANK DR</creator><scope>EVB</scope></search><sort><creationdate>19990629</creationdate><title>PRODUCTION OF BISMUTH-CONTAINING CERAMIC LAYER</title><author>MAZURE-ESPEJO CARLOS ; HINTERMAIER FRANK DR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11171546A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MAZURE-ESPEJO CARLOS</creatorcontrib><creatorcontrib>HINTERMAIER FRANK DR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAZURE-ESPEJO CARLOS</au><au>HINTERMAIER FRANK DR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF BISMUTH-CONTAINING CERAMIC LAYER</title><date>1999-06-29</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To eliminate the problem of aging of a starting soln. such as colloid formation and to form a ferroelectric ceramic layer by dissolving a Bi-contg. precursor in a specified org. acid, dissolving other precursor in other solvent, applying the resultant solns. on a substrate and heating them. SOLUTION: A Bi-contg. precursor is dissolved in an org. acid of the formula Cn H2n+1 COOH [(n) is 0-2] and, optionally, water. Other precursor is dissolved in other solvent such as THF. The resultant solns. are applied on a substrate and heated to form the objective ceramic layer. An org. acid of the formula Cn H2n+1 COOH [where (n) is 0-2] and, optionally, water are preferably used as the other solvent and it is further preferable that all the precursors are dissolved in the same org. acid. Salts of org. acids, oxides, ethoxides or methoxides are preferably used as the precursors.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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subjects | APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
title | PRODUCTION OF BISMUTH-CONTAINING CERAMIC LAYER |
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