ETCHING OF LAYER CONTAINING SILICON DIOXIDE FORMED ON SEMICONDUCTOR SUBSTRATE, IMPROVEMENT OF OXIDE-NITRIDE ETCH SELECTIVITY IN ETCHING OF LAYER CONTAINING BOROPHOSPHOSILICATE GLASS, AND DRAM

PROBLEM TO BE SOLVED: To suppress metal contamination in a layer containing silicon dioxide and prevent electric short-circuits near a contact hole due to carelessness, when etching a semiconductor substrate through a layer containing silicon dioxide formed on the semiconductor substrate in a plasma...

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Bibliographische Detailangaben

Hauptverfasser:	KIRCHHOFF MARKUS M, HANEBECK JOCHEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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