SEMICONDUCTOR LIGHT-EMITTING ELEMENT
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor light-emitting element which uses low operating current and emits blue light. SOLUTION: A quantum well active layer 4, having a zinc blende type crystal structure in which the crystal is grown in a direction which is inclined by >=5...
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creator | TAKAHASHI MAKOTO KURODA TAKARO OTOSHI SO |
description | PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor light-emitting element which uses low operating current and emits blue light. SOLUTION: A quantum well active layer 4, having a zinc blende type crystal structure in which the crystal is grown in a direction which is inclined by >=5 deg. from the [110]-axis or an equivalent axis is arranged on a substrate 1. The well layer of the layer 4 is constituted of Ga1-x Inx N (where the range for X is 0 |
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SOLUTION: A quantum well active layer 4, having a zinc blende type crystal structure in which the crystal is grown in a direction which is inclined by >=5 deg. from the [110]-axis or an equivalent axis is arranged on a substrate 1. The well layer of the layer 4 is constituted of Ga1-x Inx N (where the range for X is 0<=x<=1) Ga1-x Inx N1-y Asy (where respective ranges are 0<=x<=1 and 0<=y<=0.5), or Ga1-x Inx N1-z Pz (where ranges for respectively for x and z are 0<=x<=1 and 0<=z<=0.5).]]></description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990602&DB=EPODOC&CC=JP&NR=H11150294A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990602&DB=EPODOC&CC=JP&NR=H11150294A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKAHASHI MAKOTO</creatorcontrib><creatorcontrib>KURODA TAKARO</creatorcontrib><creatorcontrib>OTOSHI SO</creatorcontrib><title>SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><description><![CDATA[PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor light-emitting element which uses low operating current and emits blue light. SOLUTION: A quantum well active layer 4, having a zinc blende type crystal structure in which the crystal is grown in a direction which is inclined by >=5 deg. from the [110]-axis or an equivalent axis is arranged on a substrate 1. The well layer of the layer 4 is constituted of Ga1-x Inx N (where the range for X is 0<=x<=1) Ga1-x Inx N1-y Asy (where respective ranges are 0<=x<=1 and 0<=y<=0.5), or Ga1-x Inx N1-z Pz (where ranges for respectively for x and z are 0<=x<=1 and 0<=z<=0.5).]]></description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAJdvX1dPb3cwl1DvEPUvDxdPcI0QUKhYR4-rkruPq4-rr6hfAwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknivAA9DQ0NTAyNLE0djYtQAAJ1RI2o</recordid><startdate>19990602</startdate><enddate>19990602</enddate><creator>TAKAHASHI MAKOTO</creator><creator>KURODA TAKARO</creator><creator>OTOSHI SO</creator><scope>EVB</scope></search><sort><creationdate>19990602</creationdate><title>SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><author>TAKAHASHI MAKOTO ; KURODA TAKARO ; OTOSHI SO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11150294A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKAHASHI MAKOTO</creatorcontrib><creatorcontrib>KURODA TAKARO</creatorcontrib><creatorcontrib>OTOSHI SO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKAHASHI MAKOTO</au><au>KURODA TAKARO</au><au>OTOSHI SO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR LIGHT-EMITTING ELEMENT</title><date>1999-06-02</date><risdate>1999</risdate><abstract><![CDATA[PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor light-emitting element which uses low operating current and emits blue light. SOLUTION: A quantum well active layer 4, having a zinc blende type crystal structure in which the crystal is grown in a direction which is inclined by >=5 deg. from the [110]-axis or an equivalent axis is arranged on a substrate 1. The well layer of the layer 4 is constituted of Ga1-x Inx N (where the range for X is 0<=x<=1) Ga1-x Inx N1-y Asy (where respective ranges are 0<=x<=1 and 0<=y<=0.5), or Ga1-x Inx N1-z Pz (where ranges for respectively for x and z are 0<=x<=1 and 0<=z<=0.5).]]></abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
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