MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide the formation method of a shallow trench element separation area provided with superior electrical characteristics. SOLUTION: This manufacture is provided with a process for successively forming a first thermally oxidized film 2 and a silicon oxynitride film 3 on a s...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	IZUMI HIROHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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