PYROLYTIC BORON NITRIDE VESSEL
PROBLEM TO BE SOLVED: To facilitate the control of the internal temp. distribution of a pyrolytic boron nitride vessel used in the production of a compd. semiconductor signal crystal as well as to easily form a temp. gradient of molten starting material in the vessel by exposing a laminated cross se...
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| creator | IWAI RYOJI SATO KENJI KIMURA NOBORU |
| description | PROBLEM TO BE SOLVED: To facilitate the control of the internal temp. distribution of a pyrolytic boron nitride vessel used in the production of a compd. semiconductor signal crystal as well as to easily form a temp. gradient of molten starting material in the vessel by exposing a laminated cross section of pyrolytic boron nitride in a part of the inner surface of the vessel. SOLUTION: A laminated cross section of pyrolytic boron nitride is exposed in part of the inner surface of a pyrolytic boron nitride vessel for holding molten starting material used in the production of a compd. semiconductor single crystal. In the case where the compd. semiconductor single crystal is produced by LEC method, the central protruding part of the inner bottom of the vessel is removed by a prescribed thickness by mechanical polishing to exposed a laminated cross section in the part. The angle between the inner surface of the vessel and a laminated face in the laminated cross section exposed part (e.g. the angle θ25 at 25mm radius from the central axis of the vessel and the angle θ50 at 50mm radius) is preferably regulated to 0.5-90 deg.. |
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SOLUTION: A laminated cross section of pyrolytic boron nitride is exposed in part of the inner surface of a pyrolytic boron nitride vessel for holding molten starting material used in the production of a compd. semiconductor single crystal. In the case where the compd. semiconductor single crystal is produced by LEC method, the central protruding part of the inner bottom of the vessel is removed by a prescribed thickness by mechanical polishing to exposed a laminated cross section in the part. The angle between the inner surface of the vessel and a laminated face in the laminated cross section exposed part (e.g. the angle θ25 at 25mm radius from the central axis of the vessel and the angle θ50 at 50mm radius) is preferably regulated to 0.5-90 deg..</description><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980407&DB=EPODOC&CC=JP&NR=H1087306A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980407&DB=EPODOC&CC=JP&NR=H1087306A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IWAI RYOJI</creatorcontrib><creatorcontrib>SATO KENJI</creatorcontrib><creatorcontrib>KIMURA NOBORU</creatorcontrib><title>PYROLYTIC BORON NITRIDE VESSEL</title><description>PROBLEM TO BE SOLVED: To facilitate the control of the internal temp. distribution of a pyrolytic boron nitride vessel used in the production of a compd. semiconductor signal crystal as well as to easily form a temp. gradient of molten starting material in the vessel by exposing a laminated cross section of pyrolytic boron nitride in a part of the inner surface of the vessel. SOLUTION: A laminated cross section of pyrolytic boron nitride is exposed in part of the inner surface of a pyrolytic boron nitride vessel for holding molten starting material used in the production of a compd. semiconductor single crystal. In the case where the compd. semiconductor single crystal is produced by LEC method, the central protruding part of the inner bottom of the vessel is removed by a prescribed thickness by mechanical polishing to exposed a laminated cross section in the part. 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SOLUTION: A laminated cross section of pyrolytic boron nitride is exposed in part of the inner surface of a pyrolytic boron nitride vessel for holding molten starting material used in the production of a compd. semiconductor single crystal. In the case where the compd. semiconductor single crystal is produced by LEC method, the central protruding part of the inner bottom of the vessel is removed by a prescribed thickness by mechanical polishing to exposed a laminated cross section in the part. The angle between the inner surface of the vessel and a laminated face in the laminated cross section exposed part (e.g. the angle θ25 at 25mm radius from the central axis of the vessel and the angle θ50 at 50mm radius) is preferably regulated to 0.5-90 deg..</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PYROLYTIC BORON NITRIDE VESSEL |
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