INDUCTIVELY COUPLED PLASMA REACTOR HAVING FARADAY SPUTTER SHIELD
PROBLEM TO BE SOLVED: To make it possible to operate at high electric power by including a plurality of slots attached at a right angle to an RF coil and blocking all line-of-sight routes between a plasma formation area within a chamber and the outer wall. SOLUTION: A double slot shield is formed as...
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| creator | LAI KWOK FAI DREWERY JOHN |
| description | PROBLEM TO BE SOLVED: To make it possible to operate at high electric power by including a plurality of slots attached at a right angle to an RF coil and blocking all line-of-sight routes between a plasma formation area within a chamber and the outer wall. SOLUTION: A double slot shield is formed as to have a shield element of an inner shield 28 offset from the slot of an outer shield 30 so that a line-of- sight route between a plasma 20 and an RF coil 26 may be blocked. The double slot shield protects an inductive cylinder 24 from conductive vapor-deposit contamination only when the average free path of a metallic atom in the plasma 20 is very longer than a distance between two shield layers 28 and 30. In addition, a slot width w is set so that the layers 28 and 30 may be overlapped with each other so as to realize such a state that no line-of-sight route exists between the plasma 20 and RF coil 26. Thus, this reactor can be operated at high electric power. |
| format | Patent |
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SOLUTION: A double slot shield is formed as to have a shield element of an inner shield 28 offset from the slot of an outer shield 30 so that a line-of- sight route between a plasma 20 and an RF coil 26 may be blocked. The double slot shield protects an inductive cylinder 24 from conductive vapor-deposit contamination only when the average free path of a metallic atom in the plasma 20 is very longer than a distance between two shield layers 28 and 30. In addition, a slot width w is set so that the layers 28 and 30 may be overlapped with each other so as to realize such a state that no line-of-sight route exists between the plasma 20 and RF coil 26. Thus, this reactor can be operated at high electric power.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980224&DB=EPODOC&CC=JP&NR=H1055983A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980224&DB=EPODOC&CC=JP&NR=H1055983A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAI KWOK FAI</creatorcontrib><creatorcontrib>DREWERY JOHN</creatorcontrib><title>INDUCTIVELY COUPLED PLASMA REACTOR HAVING FARADAY SPUTTER SHIELD</title><description>PROBLEM TO BE SOLVED: To make it possible to operate at high electric power by including a plurality of slots attached at a right angle to an RF coil and blocking all line-of-sight routes between a plasma formation area within a chamber and the outer wall. SOLUTION: A double slot shield is formed as to have a shield element of an inner shield 28 offset from the slot of an outer shield 30 so that a line-of- sight route between a plasma 20 and an RF coil 26 may be blocked. The double slot shield protects an inductive cylinder 24 from conductive vapor-deposit contamination only when the average free path of a metallic atom in the plasma 20 is very longer than a distance between two shield layers 28 and 30. In addition, a slot width w is set so that the layers 28 and 30 may be overlapped with each other so as to realize such a state that no line-of-sight route exists between the plasma 20 and RF coil 26. Thus, this reactor can be operated at high electric power.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDw9HMJdQ7xDHP1iVRw9g8N8HF1UQjwcQz2dVQIcnV0DvEPUvBwDPP0c1dwcwxydHGMVAgOCA0JcQ1SCPbwdPVx4WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHoYGpqaWFsaOxkQoAQB69Cq0</recordid><startdate>19980224</startdate><enddate>19980224</enddate><creator>LAI KWOK FAI</creator><creator>DREWERY JOHN</creator><scope>EVB</scope></search><sort><creationdate>19980224</creationdate><title>INDUCTIVELY COUPLED PLASMA REACTOR HAVING FARADAY SPUTTER SHIELD</title><author>LAI KWOK FAI ; DREWERY JOHN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH1055983A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LAI KWOK FAI</creatorcontrib><creatorcontrib>DREWERY JOHN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAI KWOK FAI</au><au>DREWERY JOHN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INDUCTIVELY COUPLED PLASMA REACTOR HAVING FARADAY SPUTTER SHIELD</title><date>1998-02-24</date><risdate>1998</risdate><abstract>PROBLEM TO BE SOLVED: To make it possible to operate at high electric power by including a plurality of slots attached at a right angle to an RF coil and blocking all line-of-sight routes between a plasma formation area within a chamber and the outer wall. SOLUTION: A double slot shield is formed as to have a shield element of an inner shield 28 offset from the slot of an outer shield 30 so that a line-of- sight route between a plasma 20 and an RF coil 26 may be blocked. The double slot shield protects an inductive cylinder 24 from conductive vapor-deposit contamination only when the average free path of a metallic atom in the plasma 20 is very longer than a distance between two shield layers 28 and 30. In addition, a slot width w is set so that the layers 28 and 30 may be overlapped with each other so as to realize such a state that no line-of-sight route exists between the plasma 20 and RF coil 26. Thus, this reactor can be operated at high electric power.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | INDUCTIVELY COUPLED PLASMA REACTOR HAVING FARADAY SPUTTER SHIELD |
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