MANUFACTURE OF SOI BOARD

PROBLEM TO BE SOLVED: To form a silicon device layer with a uniform thickness without a process for forming an etching stopping film separately by forming a silicon device layer by using an isolation film as an etching stopping film and etching a device substrate. SOLUTION: Buried oxide films 24A, 2...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KIN SAIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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