LEAD FRAME FOR SEMICONDUCTOR
PROBLEM TO BE SOLVED: To provide a lead frame easy to remove its oxide by electrolytic reduction, rigid not to much with interlayers made of materials whose corrosion resistances are equal to or smaller than its substrate material. SOLUTION: This lead frame 1 is constituted to have a chip mounting p...
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| creator | YOSHIOKA OSAMU AKINO HISANORI TOMOBE MASAKATSU OZAKI TOSHINORI TAKEYA NORIAKI |
| description | PROBLEM TO BE SOLVED: To provide a lead frame easy to remove its oxide by electrolytic reduction, rigid not to much with interlayers made of materials whose corrosion resistances are equal to or smaller than its substrate material. SOLUTION: This lead frame 1 is constituted to have a chip mounting portion 4 for mounting a semiconductor clip thereon, inner leads 2 for connecting electrodes on the semiconductor chip therewith, and outer leads 3 for connecting printed boards, etc., therewith. In this case, on both whole surfaces of a lead frame substrate 5 made of Cu alloy or Fe-Ni alloy, Co or Co-alloy plating films 6 are formed so that each film 6 has a film thickness of 0.5-20μm. On the top surfaces of the respective Co or Co-alloy plating films 6, Pd plating films 7a or composite films each of which comprises the Pd plating film 7a and an Au plating film 7b are formed so that the film 7a or the composite film has a film thickness of 0.05-0.2μm. |
| format | Patent |
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SOLUTION: This lead frame 1 is constituted to have a chip mounting portion 4 for mounting a semiconductor clip thereon, inner leads 2 for connecting electrodes on the semiconductor chip therewith, and outer leads 3 for connecting printed boards, etc., therewith. In this case, on both whole surfaces of a lead frame substrate 5 made of Cu alloy or Fe-Ni alloy, Co or Co-alloy plating films 6 are formed so that each film 6 has a film thickness of 0.5-20μm. On the top surfaces of the respective Co or Co-alloy plating films 6, Pd plating films 7a or composite films each of which comprises the Pd plating film 7a and an Au plating film 7b are formed so that the film 7a or the composite film has a film thickness of 0.05-0.2μm.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980213&DB=EPODOC&CC=JP&NR=H1041452A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980213&DB=EPODOC&CC=JP&NR=H1041452A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOSHIOKA OSAMU</creatorcontrib><creatorcontrib>AKINO HISANORI</creatorcontrib><creatorcontrib>TOMOBE MASAKATSU</creatorcontrib><creatorcontrib>OZAKI TOSHINORI</creatorcontrib><creatorcontrib>TAKEYA NORIAKI</creatorcontrib><title>LEAD FRAME FOR SEMICONDUCTOR</title><description>PROBLEM TO BE SOLVED: To provide a lead frame easy to remove its oxide by electrolytic reduction, rigid not to much with interlayers made of materials whose corrosion resistances are equal to or smaller than its substrate material. 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On the top surfaces of the respective Co or Co-alloy plating films 6, Pd plating films 7a or composite films each of which comprises the Pd plating film 7a and an Au plating film 7b are formed so that the film 7a or the composite film has a film thickness of 0.05-0.2μm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDxcXV0UXALcvR1VXDzD1IIdvX1dPb3cwl1DvEP4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHoYGJoYmpkaOxkQoAQAnlyBs</recordid><startdate>19980213</startdate><enddate>19980213</enddate><creator>YOSHIOKA OSAMU</creator><creator>AKINO HISANORI</creator><creator>TOMOBE MASAKATSU</creator><creator>OZAKI TOSHINORI</creator><creator>TAKEYA NORIAKI</creator><scope>EVB</scope></search><sort><creationdate>19980213</creationdate><title>LEAD FRAME FOR SEMICONDUCTOR</title><author>YOSHIOKA OSAMU ; AKINO HISANORI ; TOMOBE MASAKATSU ; OZAKI TOSHINORI ; TAKEYA NORIAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH1041452A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YOSHIOKA OSAMU</creatorcontrib><creatorcontrib>AKINO HISANORI</creatorcontrib><creatorcontrib>TOMOBE MASAKATSU</creatorcontrib><creatorcontrib>OZAKI TOSHINORI</creatorcontrib><creatorcontrib>TAKEYA NORIAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOSHIOKA OSAMU</au><au>AKINO HISANORI</au><au>TOMOBE MASAKATSU</au><au>OZAKI TOSHINORI</au><au>TAKEYA NORIAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LEAD FRAME FOR SEMICONDUCTOR</title><date>1998-02-13</date><risdate>1998</risdate><abstract>PROBLEM TO BE SOLVED: To provide a lead frame easy to remove its oxide by electrolytic reduction, rigid not to much with interlayers made of materials whose corrosion resistances are equal to or smaller than its substrate material. SOLUTION: This lead frame 1 is constituted to have a chip mounting portion 4 for mounting a semiconductor clip thereon, inner leads 2 for connecting electrodes on the semiconductor chip therewith, and outer leads 3 for connecting printed boards, etc., therewith. In this case, on both whole surfaces of a lead frame substrate 5 made of Cu alloy or Fe-Ni alloy, Co or Co-alloy plating films 6 are formed so that each film 6 has a film thickness of 0.5-20μm. On the top surfaces of the respective Co or Co-alloy plating films 6, Pd plating films 7a or composite films each of which comprises the Pd plating film 7a and an Au plating film 7b are formed so that the film 7a or the composite film has a film thickness of 0.05-0.2μm.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | LEAD FRAME FOR SEMICONDUCTOR |
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