SEMICONDUCTOR DEVICE AND PRODUCING METHOD THEREFOR

PROBLEM TO BE SOLVED: To prevent aluminium wire disconnection caused by the generation of gas during a high temperature leaving test. SOLUTION: A power transistor 19 is produced by using a platingless copper lead frame and an aluminium wire, and both the ends of aluminium wire 16 are bonded to an electrode pad 12a of pellet 12 bonded to a header 10 and bonding parts 7a and 8a of inner leads 7 and 8. The 2nd bonding of aluminium wire 16 is executed to a wire bonded layer 15 formed by sticking silver foil to the bonding parts 7a and 8a of inner leads. Thus, since the aluminium wire 16 performs the 2nd bonding to the wire bonded layer 15 of silver foil, no Al-Cu layer is formed. Even when gas corroding the Al-Cu layer is generated from the resin of resin sealing body during the high temperature leaving test, since the 2nd bonding part does not corrode, the aluminium wire 16 is not disconnected.