LEAD FRAME FOR SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a lead frame which is excellent in adhesiveness to molding resin and Ag paste resin and high in reliability. SOLUTION: (1) The crystal of Ni plating layer as an intermediate layer of a lead frame material is formed to have a highly oriented property in a (1. 1. 1) pl...
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| creator | SERIZAWA SEIICHI IGAWA MASAHIRO |
| description | PROBLEM TO BE SOLVED: To provide a lead frame which is excellent in adhesiveness to molding resin and Ag paste resin and high in reliability. SOLUTION: (1) The crystal of Ni plating layer as an intermediate layer of a lead frame material is formed to have a highly oriented property in a (1. 1. 1) plane and a (3. 1. 1) plane. (2) The Ni plating layer is 0.05μm thick, and a plating layer of one or more kind selected out of Pd, Pd alloy, Au, Au alloy, Ag, and Ag alloy is provided onto the Ni plating layer. |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | LEAD FRAME FOR SEMICONDUCTOR DEVICE |
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