ION SOURCE
PROBLEM TO BE SOLVED: To provide an ion source which produces divalent boron ions, B , in large amounts at a higher density by bonding a boron-containing plate near the exit of an ion source chamber and to a part of another interior wall to perform a plasma sputtering. SOLUTION: An arc chamber 1 for...
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| creator | SENOO KAZUHIRO |
| description | PROBLEM TO BE SOLVED: To provide an ion source which produces divalent boron ions, B , in large amounts at a higher density by bonding a boron-containing plate near the exit of an ion source chamber and to a part of another interior wall to perform a plasma sputtering. SOLUTION: An arc chamber 1 for an ion source is a bottomed container with an upper plate 2 secured to its opening, the chamber 1 and the upper plate 2 together forming a closed space that is evacuated. In the center of the upper plate 2 is an opening for taking out a beam, i.e., a slit 3. A U-shaped filament 5 is attached to the wall surface of one side of the container, and a filament current is introduced from the outside by means of a current introducing terminal 9. A reflecting electrode (reflector) 6 is secured to the wall surface opposite to the filament 5. A BN plate 8 is bonded near the slit 3 in the upper plate 2. By providing the BN plate 8, larger amounts of divalent boron ion beams can be produced. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH1027553A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH1027553A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH1027553A3</originalsourceid><addsrcrecordid>eNrjZODy9PdTCPYPDXJ25WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHoYGRuampsaOxkQoAQAl2xuW</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ION SOURCE</title><source>esp@cenet</source><creator>SENOO KAZUHIRO</creator><creatorcontrib>SENOO KAZUHIRO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide an ion source which produces divalent boron ions, B<2+> , in large amounts at a higher density by bonding a boron-containing plate near the exit of an ion source chamber and to a part of another interior wall to perform a plasma sputtering. SOLUTION: An arc chamber 1 for an ion source is a bottomed container with an upper plate 2 secured to its opening, the chamber 1 and the upper plate 2 together forming a closed space that is evacuated. In the center of the upper plate 2 is an opening for taking out a beam, i.e., a slit 3. A U-shaped filament 5 is attached to the wall surface of one side of the container, and a filament current is introduced from the outside by means of a current introducing terminal 9. A reflecting electrode (reflector) 6 is secured to the wall surface opposite to the filament 5. A BN plate 8 is bonded near the slit 3 in the upper plate 2. By providing the BN plate 8, larger amounts of divalent boron ion beams can be produced.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980127&DB=EPODOC&CC=JP&NR=H1027553A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980127&DB=EPODOC&CC=JP&NR=H1027553A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SENOO KAZUHIRO</creatorcontrib><title>ION SOURCE</title><description>PROBLEM TO BE SOLVED: To provide an ion source which produces divalent boron ions, B<2+> , in large amounts at a higher density by bonding a boron-containing plate near the exit of an ion source chamber and to a part of another interior wall to perform a plasma sputtering. SOLUTION: An arc chamber 1 for an ion source is a bottomed container with an upper plate 2 secured to its opening, the chamber 1 and the upper plate 2 together forming a closed space that is evacuated. In the center of the upper plate 2 is an opening for taking out a beam, i.e., a slit 3. A U-shaped filament 5 is attached to the wall surface of one side of the container, and a filament current is introduced from the outside by means of a current introducing terminal 9. A reflecting electrode (reflector) 6 is secured to the wall surface opposite to the filament 5. A BN plate 8 is bonded near the slit 3 in the upper plate 2. By providing the BN plate 8, larger amounts of divalent boron ion beams can be produced.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODy9PdTCPYPDXJ25WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHoYGRuampsaOxkQoAQAl2xuW</recordid><startdate>19980127</startdate><enddate>19980127</enddate><creator>SENOO KAZUHIRO</creator><scope>EVB</scope></search><sort><creationdate>19980127</creationdate><title>ION SOURCE</title><author>SENOO KAZUHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH1027553A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>SENOO KAZUHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SENOO KAZUHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ION SOURCE</title><date>1998-01-27</date><risdate>1998</risdate><abstract>PROBLEM TO BE SOLVED: To provide an ion source which produces divalent boron ions, B<2+> , in large amounts at a higher density by bonding a boron-containing plate near the exit of an ion source chamber and to a part of another interior wall to perform a plasma sputtering. SOLUTION: An arc chamber 1 for an ion source is a bottomed container with an upper plate 2 secured to its opening, the chamber 1 and the upper plate 2 together forming a closed space that is evacuated. In the center of the upper plate 2 is an opening for taking out a beam, i.e., a slit 3. A U-shaped filament 5 is attached to the wall surface of one side of the container, and a filament current is introduced from the outside by means of a current introducing terminal 9. A reflecting electrode (reflector) 6 is secured to the wall surface opposite to the filament 5. A BN plate 8 is bonded near the slit 3 in the upper plate 2. By providing the BN plate 8, larger amounts of divalent boron ion beams can be produced.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY |
| title | ION SOURCE |
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