METHOD OF CLEANING WAFER, UTILIZING CHEMICAL AND PHYSICAL TREATMENTS AT ONCE
PROBLEM TO BE SOLVED: To effectively remove contaminants remaining on a wafer after the CMP process by applying a chemical soln. during the scrubbing step using brushes. SOLUTION: The method comprises step 10 of feeding a deionized water and first chemical soln. from a brush station having wafer cle...
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| creator | SONG CHANG-YONG KIN SEITOKU KO YOSEN |
| description | PROBLEM TO BE SOLVED: To effectively remove contaminants remaining on a wafer after the CMP process by applying a chemical soln. during the scrubbing step using brushes. SOLUTION: The method comprises step 10 of feeding a deionized water and first chemical soln. from a brush station having wafer cleaning brushes and firstly cleaning the wafer surface in the scrubbing step using the brushed at the same time, step 20 of secondly cleaning the wafer surface using a second chemical soln. in a station continuously coupled with the brush station, and step 30 of washing the secondly cleaned wafer with the deionized water, thereby removing the chemical solns. and fine contaminants remaining on the wafer. The wafer is then dried by e.g. the spin drying to end the wafer cleaning step after the CMP step. |
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SOLUTION: The method comprises step 10 of feeding a deionized water and first chemical soln. from a brush station having wafer cleaning brushes and firstly cleaning the wafer surface in the scrubbing step using the brushed at the same time, step 20 of secondly cleaning the wafer surface using a second chemical soln. in a station continuously coupled with the brush station, and step 30 of washing the secondly cleaned wafer with the deionized water, thereby removing the chemical solns. and fine contaminants remaining on the wafer. 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SOLUTION: The method comprises step 10 of feeding a deionized water and first chemical soln. from a brush station having wafer cleaning brushes and firstly cleaning the wafer surface in the scrubbing step using the brushed at the same time, step 20 of secondly cleaning the wafer surface using a second chemical soln. in a station continuously coupled with the brush station, and step 30 of washing the secondly cleaned wafer with the deionized water, thereby removing the chemical solns. and fine contaminants remaining on the wafer. 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SOLUTION: The method comprises step 10 of feeding a deionized water and first chemical soln. from a brush station having wafer cleaning brushes and firstly cleaning the wafer surface in the scrubbing step using the brushed at the same time, step 20 of secondly cleaning the wafer surface using a second chemical soln. in a station continuously coupled with the brush station, and step 30 of washing the secondly cleaned wafer with the deionized water, thereby removing the chemical solns. and fine contaminants remaining on the wafer. The wafer is then dried by e.g. the spin drying to end the wafer cleaning step after the CMP step.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD OF CLEANING WAFER, UTILIZING CHEMICAL AND PHYSICAL TREATMENTS AT ONCE |
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