METHOD FOR FORMING PATTERN
PROBLEM TO BE SOLVED: To prevent a refractory layer form formed on the surface part of a resist pattern comprising a chemically amplified resist formed on a semiconductor substrate, by surface-processing the surface of a semiconductor substrate with a surface treatment agent comprising a silane comp...
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| creator | ENDO MASATAKA OSAKI HIROMI FUKUMOTO TORU |
| description | PROBLEM TO BE SOLVED: To prevent a refractory layer form formed on the surface part of a resist pattern comprising a chemically amplified resist formed on a semiconductor substrate, by surface-processing the surface of a semiconductor substrate with a surface treatment agent comprising a silane compound expressed with a specific general equation. SOLUTION: In a resist coating device which comprises no chemical filter, the surface of a semiconductor substrate is surface-treated with a surface treatment agent comprising a saline compound expressed with an equation (n is integer 1-3, R is saturated hydrocarbon group, unsaturated hydrocarbon group, and alkyl carbonyl group of C numbers 1-6, R' is hydrogen atom, saturated hydrocarbon group, unsaturated hydrocarbon group of C number 1-6, alicyclic saturated hydrocarbon group). A resist is coated on a surface-treated semiconductor substrate to form a resist film, and the film is exposed with a mask of desired pattern shape, then the exposed film is developed to form a resist pattern. |
| format | Patent |
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SOLUTION: In a resist coating device which comprises no chemical filter, the surface of a semiconductor substrate is surface-treated with a surface treatment agent comprising a saline compound expressed with an equation (n is integer 1-3, R is saturated hydrocarbon group, unsaturated hydrocarbon group, and alkyl carbonyl group of C numbers 1-6, R' is hydrogen atom, saturated hydrocarbon group, unsaturated hydrocarbon group of C number 1-6, alicyclic saturated hydrocarbon group). A resist is coated on a surface-treated semiconductor substrate to form a resist film, and the film is exposed with a mask of desired pattern shape, then the exposed film is developed to form a resist pattern.</description><edition>6</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981009&DB=EPODOC&CC=JP&NR=H10270356A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981009&DB=EPODOC&CC=JP&NR=H10270356A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ENDO MASATAKA</creatorcontrib><creatorcontrib>OSAKI HIROMI</creatorcontrib><creatorcontrib>FUKUMOTO TORU</creatorcontrib><title>METHOD FOR FORMING PATTERN</title><description>PROBLEM TO BE SOLVED: To prevent a refractory layer form formed on the surface part of a resist pattern comprising a chemically amplified resist formed on a semiconductor substrate, by surface-processing the surface of a semiconductor substrate with a surface treatment agent comprising a silane compound expressed with a specific general equation. SOLUTION: In a resist coating device which comprises no chemical filter, the surface of a semiconductor substrate is surface-treated with a surface treatment agent comprising a saline compound expressed with an equation (n is integer 1-3, R is saturated hydrocarbon group, unsaturated hydrocarbon group, and alkyl carbonyl group of C numbers 1-6, R' is hydrogen atom, saturated hydrocarbon group, unsaturated hydrocarbon group of C number 1-6, alicyclic saturated hydrocarbon group). 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SOLUTION: In a resist coating device which comprises no chemical filter, the surface of a semiconductor substrate is surface-treated with a surface treatment agent comprising a saline compound expressed with an equation (n is integer 1-3, R is saturated hydrocarbon group, unsaturated hydrocarbon group, and alkyl carbonyl group of C numbers 1-6, R' is hydrogen atom, saturated hydrocarbon group, unsaturated hydrocarbon group of C number 1-6, alicyclic saturated hydrocarbon group). A resist is coated on a surface-treated semiconductor substrate to form a resist film, and the film is exposed with a mask of desired pattern shape, then the exposed film is developed to form a resist pattern.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | METHOD FOR FORMING PATTERN |
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