CVD JIG, MANUFACTURE OF SEMICONDUCTOR DEVICE USING THE SAME, AND MANUFACTURE OF THE CVD JIG

PROBLEM TO BE SOLVED: To improve the resistance to cleaning chemicals while taking measures for the devitrification and cracks by specifying the OH concn. of the quartz surface near wafer supports of a CVD jig. SOLUTION: For manufacturing a CVD jig, the surface is melted using an arc plasma torch 14...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KOBAYASHI KAZUO, MIMURA SEIICHI, FUJII ATSUHIRO, HORIE YASUHIKO, ONISHI HIROSHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To improve the resistance to cleaning chemicals while taking measures for the devitrification and cracks by specifying the OH concn. of the quartz surface near wafer supports of a CVD jig. SOLUTION: For manufacturing a CVD jig, the surface is melted using an arc plasma torch 14 e.g. tungsten inert gas torch using a high-m.p. metal e.g. W for high temp. parts of the torch, esp. inner electrode. To avoid contaminating the plasma with a metal from the electrode, an ac electrode is used and covered with a ceramic against sputtering. A wafer support 2 surface is exposed to an atmosphere substd. with Ar gas produced from the arc plasma torch to avoid the action of H on quartz, thereby reducing the OH concn. in quartz to 30ppm or less on the quartz surface to improve the corrosion resistance.