SELECTIVE CHEMICAL VAPOR DEPOSITION OF COPPER METAL FILM AND SYNTHESIZING METHOD OF CU+1(BETA-DIKETONATE) OLEFIN COMPOSITE MATERIAL

PROBLEM TO BE SOLVED: To selectively form a pure copper thin film by chemical vapor deposition on the metal or conductive surface of a substrate by bringing the substrate into contact with a volatile org. metal copper composite material having specified or higher vapor pressure at specified temp. an...

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Hauptverfasser:	NORMAN JOHN A T, DYER PAUL N
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC OR CARBOCYCLIC COMPOUNDS ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To selectively form a pure copper thin film by chemical vapor deposition on the metal or conductive surface of a substrate by bringing the substrate into contact with a volatile org. metal copper composite material having specified or higher vapor pressure at specified temp. and then carrying out vapor deposition in a specified temp. range. SOLUTION: The vapor deposition temp. is specified to rather low temp. as 100 to 190 deg.C. The volatile org. metal copper precursor material to be incontact with the substrate is expressed by formula having >=0.01mmHg vapor pressure at 100 deg.C. In the formula, R , R are independently 1 to 8C perfluoroalkyl groups, R is H or 1 to 8C perfluoroalkyl group, and L is a ligand for carbon monoxide, isonitrile or unsatd. hydrocarbon containing at least one nonaromatic unstad. bond. This volatile org. metal copper precursor is, for example, [Cu (hexafluoroacetylacetonate )1,5-cyclooctadiene.