METHOD FOR SHAPING RESIST PATTERN

PROBLEM TO BE SOLVED: To prevent the formation of a oxide film on the surface of GaAs by shaping a resist pattern by performing plasma treatment using sulfur hexafluoride. SOLUTION: A resist pattern 6 is etched by several tens of nanometers in thickness by the RIE method using sulfur hexafluoride (S...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MEIKE KUNIHIKO, KIMIZUKA MASAKATSU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!