SEMICONDUCTOR LASER AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR LASER AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a simple manufacturing method of a semiconductor laser having window structure. SOLUTION: A concave groove 23 is formed at the predetermined region of a layered structure 19 having an active layer 15, a crystal 20 consisting of window material is grown in the concave...

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Bibliographische Detailangaben
Hauptverfasser: HORIKAWA HIDEAKI, NAKAJIMA TETSUHITO, YAEGASHI HIROKI, GOTO OSAMU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a simple manufacturing method of a semiconductor laser having window structure. SOLUTION: A concave groove 23 is formed at the predetermined region of a layered structure 19 having an active layer 15, a crystal 20 consisting of window material is grown in the concave groove 23 and on the surface 18 of the layered structure 19 opened by the concave groove 23. After the inside of the concave groove 23 is buried by the crystal 20 of the window material, a crystal part 20a of the window material grown on the surface except the groove 23 of the layered structure 19 is selectively removed.