TAPER PROFILE ETCHING METHOD

PROBLEM TO BE SOLVED: To form a smooth etching profile without stepped portions or boundary irregularities by exposing a part comprising a substrate, an etchable film and a pattern-formable mask layer, to an etchant-gas mixture of halogen-including gas and inert gas. SOLUTION: The part to be etched...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YUEN-KUI WANG, CAM S LAW, YUJA SUU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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