GAS SENSOR

PROBLEM TO BE SOLVED: To measure the concentration of ammonia or the like accurately and precisely while eliminating the effect of other gas components by employing WO3 as the main metal oxide of a semiconductor layer and adding a specified quantity of MoO3 thereto. SOLUTION: An electrode 2 is forme...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YAMAZOE NOBORU, KUMAZAKI OSAMU, MIURA NORIO, MATSUDA KAZUYUKI, MIWA MASARU, HISHIKI TATSUYA
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YAMAZOE NOBORU
KUMAZAKI OSAMU
MIURA NORIO
MATSUDA KAZUYUKI
MIWA MASARU
HISHIKI TATSUYA
description PROBLEM TO BE SOLVED: To measure the concentration of ammonia or the like accurately and precisely while eliminating the effect of other gas components by employing WO3 as the main metal oxide of a semiconductor layer and adding a specified quantity of MoO3 thereto. SOLUTION: An electrode 2 is formed by winding a pair of Pt wires around an alumina tube 1. A metal oxide semiconductor layer 3 comprises a porous sintered body formed to wrap the electrode 2. WO3 is employed as the main metal oxide of the semiconductor layer 3 MoO3 is added thereto. This arrangement prevents accurate detection of ammonia from being disabled by the effect of NOx or COx gas coexisting with ammonia in a gas to be detected when a noble metal, e.g. Pt or Au, is added. Preferably, MoO3 is added by 20wt.% or more. When it is added less than 20wt.%, effect of other gas can not be blocked sufficiently.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH1019821A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH1019821A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH1019821A3</originalsourceid><addsrcrecordid>eNrjZOBydwxWCHb1C_YP4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHoYGhpYWRoaOxkQoAQAkgBuS</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GAS SENSOR</title><source>esp@cenet</source><creator>YAMAZOE NOBORU ; KUMAZAKI OSAMU ; MIURA NORIO ; MATSUDA KAZUYUKI ; MIWA MASARU ; HISHIKI TATSUYA</creator><creatorcontrib>YAMAZOE NOBORU ; KUMAZAKI OSAMU ; MIURA NORIO ; MATSUDA KAZUYUKI ; MIWA MASARU ; HISHIKI TATSUYA</creatorcontrib><description>PROBLEM TO BE SOLVED: To measure the concentration of ammonia or the like accurately and precisely while eliminating the effect of other gas components by employing WO3 as the main metal oxide of a semiconductor layer and adding a specified quantity of MoO3 thereto. SOLUTION: An electrode 2 is formed by winding a pair of Pt wires around an alumina tube 1. A metal oxide semiconductor layer 3 comprises a porous sintered body formed to wrap the electrode 2. WO3 is employed as the main metal oxide of the semiconductor layer 3 MoO3 is added thereto. This arrangement prevents accurate detection of ammonia from being disabled by the effect of NOx or COx gas coexisting with ammonia in a gas to be detected when a noble metal, e.g. Pt or Au, is added. Preferably, MoO3 is added by 20wt.% or more. When it is added less than 20wt.%, effect of other gas can not be blocked sufficiently.</description><edition>6</edition><language>eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19980123&amp;DB=EPODOC&amp;CC=JP&amp;NR=H1019821A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19980123&amp;DB=EPODOC&amp;CC=JP&amp;NR=H1019821A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAZOE NOBORU</creatorcontrib><creatorcontrib>KUMAZAKI OSAMU</creatorcontrib><creatorcontrib>MIURA NORIO</creatorcontrib><creatorcontrib>MATSUDA KAZUYUKI</creatorcontrib><creatorcontrib>MIWA MASARU</creatorcontrib><creatorcontrib>HISHIKI TATSUYA</creatorcontrib><title>GAS SENSOR</title><description>PROBLEM TO BE SOLVED: To measure the concentration of ammonia or the like accurately and precisely while eliminating the effect of other gas components by employing WO3 as the main metal oxide of a semiconductor layer and adding a specified quantity of MoO3 thereto. SOLUTION: An electrode 2 is formed by winding a pair of Pt wires around an alumina tube 1. A metal oxide semiconductor layer 3 comprises a porous sintered body formed to wrap the electrode 2. WO3 is employed as the main metal oxide of the semiconductor layer 3 MoO3 is added thereto. This arrangement prevents accurate detection of ammonia from being disabled by the effect of NOx or COx gas coexisting with ammonia in a gas to be detected when a noble metal, e.g. Pt or Au, is added. Preferably, MoO3 is added by 20wt.% or more. When it is added less than 20wt.%, effect of other gas can not be blocked sufficiently.</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOBydwxWCHb1C_YP4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHoYGhpYWRoaOxkQoAQAkgBuS</recordid><startdate>19980123</startdate><enddate>19980123</enddate><creator>YAMAZOE NOBORU</creator><creator>KUMAZAKI OSAMU</creator><creator>MIURA NORIO</creator><creator>MATSUDA KAZUYUKI</creator><creator>MIWA MASARU</creator><creator>HISHIKI TATSUYA</creator><scope>EVB</scope></search><sort><creationdate>19980123</creationdate><title>GAS SENSOR</title><author>YAMAZOE NOBORU ; KUMAZAKI OSAMU ; MIURA NORIO ; MATSUDA KAZUYUKI ; MIWA MASARU ; HISHIKI TATSUYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH1019821A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAZOE NOBORU</creatorcontrib><creatorcontrib>KUMAZAKI OSAMU</creatorcontrib><creatorcontrib>MIURA NORIO</creatorcontrib><creatorcontrib>MATSUDA KAZUYUKI</creatorcontrib><creatorcontrib>MIWA MASARU</creatorcontrib><creatorcontrib>HISHIKI TATSUYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAZOE NOBORU</au><au>KUMAZAKI OSAMU</au><au>MIURA NORIO</au><au>MATSUDA KAZUYUKI</au><au>MIWA MASARU</au><au>HISHIKI TATSUYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GAS SENSOR</title><date>1998-01-23</date><risdate>1998</risdate><abstract>PROBLEM TO BE SOLVED: To measure the concentration of ammonia or the like accurately and precisely while eliminating the effect of other gas components by employing WO3 as the main metal oxide of a semiconductor layer and adding a specified quantity of MoO3 thereto. SOLUTION: An electrode 2 is formed by winding a pair of Pt wires around an alumina tube 1. A metal oxide semiconductor layer 3 comprises a porous sintered body formed to wrap the electrode 2. WO3 is employed as the main metal oxide of the semiconductor layer 3 MoO3 is added thereto. This arrangement prevents accurate detection of ammonia from being disabled by the effect of NOx or COx gas coexisting with ammonia in a gas to be detected when a noble metal, e.g. Pt or Au, is added. Preferably, MoO3 is added by 20wt.% or more. When it is added less than 20wt.%, effect of other gas can not be blocked sufficiently.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JPH1019821A
source esp@cenet
subjects INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
title GAS SENSOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T16%3A07%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMAZOE%20NOBORU&rft.date=1998-01-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH1019821A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true