HIGH BREAKDOWN STRENGTH ELEMENT HAVING CHANNEL REGION AND STRAY REGION ISOLATED THROUGH INSULATOR AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To minimize a junction leakage current by electrically isolating a channel region and a stray region using an insulator wall and to enhance the reliability of an element by suppressing the generation of an abnormal current due to impact ionization. SOLUTION: A wall of silicon d...

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Bibliographische Detailangaben

Hauptverfasser:	KAKU MEISHIN, GU CHINKON, KYO CHINEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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