METHOD FOR ISOLATING ELEMENT OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for isolating an element of a semiconductor device which brings about improvement in element isolation characteristics and a local flatness fault and thereby achieves overall flattening. SOLUTION: After a material film 14 is formed on a semiconductor substra...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HAKU BINSHU, SAI SHIGEN, KIN CHOKEI
Format: Patent
Sprache:eng
Schlagworte:
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