METHOD FOR MANUFACTURING HIGH-CAPACITANCE STORAGE NODE STRUCTURE IN SUBSTRATE AND SUBSTRATE HAVING HIGH-CAPACITANCE STORAGE NODE

PROBLEM TO BE SOLVED: To provide a simple method for manufacturing the high-capacitance storage node structure of a DRAM(dynamic random access memory), etc. SOLUTION: In order to form a high-capacitance storage node structure in a substrate 10, a negative resist area 16 and a positive resist area 18...

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Hauptverfasser:	MARK C HEIKEE, WILLIAM H MA, DAVID V HOLICK, STEPHEN J HORMES
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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