PLASMA PROCESSING DEVICE, IN WHICH DISCHARGE DUE TO SECONDARY ELECTRIC POTENTIAL IS ELIMINATED
PROBLEM TO BE SOLVED: To prevent the generation of defective wafers due to a fall of particles onto the wafer by electrically separating a gas distributing plate from a first and a second electrode so as to prevent the generation of discharge. SOLUTION: High frequency voltage is applied between a ne...
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| creator | RIN TAIKYO SAI HEIMOKU BOKU SHINHO BUN KYONSHO KIN SHUKO JO EIKO KIN SHOSHOKU |
| description | PROBLEM TO BE SOLVED: To prevent the generation of defective wafers due to a fall of particles onto the wafer by electrically separating a gas distributing plate from a first and a second electrode so as to prevent the generation of discharge. SOLUTION: High frequency voltage is applied between a negative electrode 4 and a top lead 6 by a high frequency power source 3 so as to generate a glow discharge (Glow), etching material gas, which is led into a vacuum chamber 1, is activated so as to generate a plasma, activated neutral molecule and ion, and etching of a semi-conductor board 2 is advanced by these molecule and atomic ion so as to form a predetermined pattern. In this case, since a gas distributing plate 5 is electrically separated from a top lead 6 connected to a ground potential and the gas distributing plate does not have polarity, electric potential is kept by polymer so as to prevent the generation of discharge. Generation of particles can be securely prevented, and change of the plasma itself can be prevented, and evenness of the wafer surface can be improved. |
| format | Patent |
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SOLUTION: High frequency voltage is applied between a negative electrode 4 and a top lead 6 by a high frequency power source 3 so as to generate a glow discharge (Glow), etching material gas, which is led into a vacuum chamber 1, is activated so as to generate a plasma, activated neutral molecule and ion, and etching of a semi-conductor board 2 is advanced by these molecule and atomic ion so as to form a predetermined pattern. In this case, since a gas distributing plate 5 is electrically separated from a top lead 6 connected to a ground potential and the gas distributing plate does not have polarity, electric potential is kept by polymer so as to prevent the generation of discharge. Generation of particles can be securely prevented, and change of the plasma itself can be prevented, and evenness of the wafer surface can be improved.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980522&DB=EPODOC&CC=JP&NR=H10134997A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980522&DB=EPODOC&CC=JP&NR=H10134997A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RIN TAIKYO</creatorcontrib><creatorcontrib>SAI HEIMOKU</creatorcontrib><creatorcontrib>BOKU SHINHO</creatorcontrib><creatorcontrib>BUN KYONSHO</creatorcontrib><creatorcontrib>KIN SHUKO</creatorcontrib><creatorcontrib>JO EIKO</creatorcontrib><creatorcontrib>KIN SHOSHOKU</creatorcontrib><title>PLASMA PROCESSING DEVICE, IN WHICH DISCHARGE DUE TO SECONDARY ELECTRIC POTENTIAL IS ELIMINATED</title><description>PROBLEM TO BE SOLVED: To prevent the generation of defective wafers due to a fall of particles onto the wafer by electrically separating a gas distributing plate from a first and a second electrode so as to prevent the generation of discharge. 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Generation of particles can be securely prevented, and change of the plasma itself can be prevented, and evenness of the wafer surface can be improved.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQgOEsDqK-w7krWCpIx-NyNidtEpKouFiKxEm0UN8fHXwApx8-_qm6-gZji-CDI45RbA2aT0K8ArFwNkIGtEQyGGoGfWRIDiKTsxrDBbhhSkEIvEtsk2ADEr8qrVhMrOdqcu8fY178OlPLPScy6zy8ujwO_S0_87s7eFNsinJbVTss_3k-8sEy0g</recordid><startdate>19980522</startdate><enddate>19980522</enddate><creator>RIN TAIKYO</creator><creator>SAI HEIMOKU</creator><creator>BOKU SHINHO</creator><creator>BUN KYONSHO</creator><creator>KIN SHUKO</creator><creator>JO EIKO</creator><creator>KIN SHOSHOKU</creator><scope>EVB</scope></search><sort><creationdate>19980522</creationdate><title>PLASMA PROCESSING DEVICE, IN WHICH DISCHARGE DUE TO SECONDARY ELECTRIC POTENTIAL IS ELIMINATED</title><author>RIN TAIKYO ; SAI HEIMOKU ; BOKU SHINHO ; BUN KYONSHO ; KIN SHUKO ; JO EIKO ; KIN SHOSHOKU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH10134997A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>RIN TAIKYO</creatorcontrib><creatorcontrib>SAI HEIMOKU</creatorcontrib><creatorcontrib>BOKU SHINHO</creatorcontrib><creatorcontrib>BUN KYONSHO</creatorcontrib><creatorcontrib>KIN SHUKO</creatorcontrib><creatorcontrib>JO EIKO</creatorcontrib><creatorcontrib>KIN SHOSHOKU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RIN TAIKYO</au><au>SAI HEIMOKU</au><au>BOKU SHINHO</au><au>BUN KYONSHO</au><au>KIN SHUKO</au><au>JO EIKO</au><au>KIN SHOSHOKU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA PROCESSING DEVICE, IN WHICH DISCHARGE DUE TO SECONDARY ELECTRIC POTENTIAL IS ELIMINATED</title><date>1998-05-22</date><risdate>1998</risdate><abstract>PROBLEM TO BE SOLVED: To prevent the generation of defective wafers due to a fall of particles onto the wafer by electrically separating a gas distributing plate from a first and a second electrode so as to prevent the generation of discharge. SOLUTION: High frequency voltage is applied between a negative electrode 4 and a top lead 6 by a high frequency power source 3 so as to generate a glow discharge (Glow), etching material gas, which is led into a vacuum chamber 1, is activated so as to generate a plasma, activated neutral molecule and ion, and etching of a semi-conductor board 2 is advanced by these molecule and atomic ion so as to form a predetermined pattern. In this case, since a gas distributing plate 5 is electrically separated from a top lead 6 connected to a ground potential and the gas distributing plate does not have polarity, electric potential is kept by polymer so as to prevent the generation of discharge. Generation of particles can be securely prevented, and change of the plasma itself can be prevented, and evenness of the wafer surface can be improved.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PLASMA PROCESSING DEVICE, IN WHICH DISCHARGE DUE TO SECONDARY ELECTRIC POTENTIAL IS ELIMINATED |
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