NON-PLANAR CATHODE AND SUPPORTING DEVICE USING THE SAME AND PRODUCTION OF THIN FILM
PROBLEM TO BE SOLVED: To obtain cathodes capable of controlling the compsn. of thin films. SOLUTION: Sputtering is executed by arranging the bar-shaped cathodes 22 and the non-planar cathodes 12 formed by mounting plural pieces of these bar-shaped cathodes at a frame 23 apart spaced intervals betwee...
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| creator | SUWA HIDENORI |
| description | PROBLEM TO BE SOLVED: To obtain cathodes capable of controlling the compsn. of thin films. SOLUTION: Sputtering is executed by arranging the bar-shaped cathodes 22 and the non-planar cathodes 12 formed by mounting plural pieces of these bar-shaped cathodes at a frame 23 apart spaced intervals between the planar cathode 52 and a substrate 51. The compsn. of the thin films is changed if the ratio of the making electric power is changed or if the number of pieces of the bar-shaped cathodes 22 is changed. The sputtering may be executed by arranging the grid-shaped non-planar cathodes formed by providing the grid-shaped cathode electrodes with a target between the planar cathode 52 and the substrate 51. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH0978232A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH0978232A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH0978232A3</originalsourceid><addsrcrecordid>eNrjZAj28_fTDfBx9HMMUnB2DPHwd3FVcPRzUQgODQjwDwrx9HNXcHEN83R2VQgNBnFCPFwVgh19IYoCgvxdQp1DPP39FPzdgFKefgpunj6-PAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7Uk3ivAw8DS3MLI2MjRmAglAID1L1s</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NON-PLANAR CATHODE AND SUPPORTING DEVICE USING THE SAME AND PRODUCTION OF THIN FILM</title><source>esp@cenet</source><creator>SUWA HIDENORI</creator><creatorcontrib>SUWA HIDENORI</creatorcontrib><description>PROBLEM TO BE SOLVED: To obtain cathodes capable of controlling the compsn. of thin films. SOLUTION: Sputtering is executed by arranging the bar-shaped cathodes 22 and the non-planar cathodes 12 formed by mounting plural pieces of these bar-shaped cathodes at a frame 23 apart spaced intervals between the planar cathode 52 and a substrate 51. The compsn. of the thin films is changed if the ratio of the making electric power is changed or if the number of pieces of the bar-shaped cathodes 22 is changed. The sputtering may be executed by arranging the grid-shaped non-planar cathodes formed by providing the grid-shaped cathode electrodes with a target between the planar cathode 52 and the substrate 51.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970325&DB=EPODOC&CC=JP&NR=H0978232A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970325&DB=EPODOC&CC=JP&NR=H0978232A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUWA HIDENORI</creatorcontrib><title>NON-PLANAR CATHODE AND SUPPORTING DEVICE USING THE SAME AND PRODUCTION OF THIN FILM</title><description>PROBLEM TO BE SOLVED: To obtain cathodes capable of controlling the compsn. of thin films. SOLUTION: Sputtering is executed by arranging the bar-shaped cathodes 22 and the non-planar cathodes 12 formed by mounting plural pieces of these bar-shaped cathodes at a frame 23 apart spaced intervals between the planar cathode 52 and a substrate 51. The compsn. of the thin films is changed if the ratio of the making electric power is changed or if the number of pieces of the bar-shaped cathodes 22 is changed. The sputtering may be executed by arranging the grid-shaped non-planar cathodes formed by providing the grid-shaped cathode electrodes with a target between the planar cathode 52 and the substrate 51.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1997</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj28_fTDfBx9HMMUnB2DPHwd3FVcPRzUQgODQjwDwrx9HNXcHEN83R2VQgNBnFCPFwVgh19IYoCgvxdQp1DPP39FPzdgFKefgpunj6-PAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7Uk3ivAw8DS3MLI2MjRmAglAID1L1s</recordid><startdate>19970325</startdate><enddate>19970325</enddate><creator>SUWA HIDENORI</creator><scope>EVB</scope></search><sort><creationdate>19970325</creationdate><title>NON-PLANAR CATHODE AND SUPPORTING DEVICE USING THE SAME AND PRODUCTION OF THIN FILM</title><author>SUWA HIDENORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0978232A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1997</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SUWA HIDENORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUWA HIDENORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NON-PLANAR CATHODE AND SUPPORTING DEVICE USING THE SAME AND PRODUCTION OF THIN FILM</title><date>1997-03-25</date><risdate>1997</risdate><abstract>PROBLEM TO BE SOLVED: To obtain cathodes capable of controlling the compsn. of thin films. SOLUTION: Sputtering is executed by arranging the bar-shaped cathodes 22 and the non-planar cathodes 12 formed by mounting plural pieces of these bar-shaped cathodes at a frame 23 apart spaced intervals between the planar cathode 52 and a substrate 51. The compsn. of the thin films is changed if the ratio of the making electric power is changed or if the number of pieces of the bar-shaped cathodes 22 is changed. The sputtering may be executed by arranging the grid-shaped non-planar cathodes formed by providing the grid-shaped cathode electrodes with a target between the planar cathode 52 and the substrate 51.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | NON-PLANAR CATHODE AND SUPPORTING DEVICE USING THE SAME AND PRODUCTION OF THIN FILM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T10%3A02%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SUWA%20HIDENORI&rft.date=1997-03-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH0978232A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |