PRODUCTION OF POLYCRYSTAL SEMICONDUCTOR

PROBLEM TO BE SOLVED: To produce a polycrystal semiconductor having large crystal particles. SOLUTION: A seed crystal 24 is arranged on the bottom of a conical part 22 of a crucible 9 and a semiconductor material is inserted into the crucible 9. The crucible 9 is heated by a heating furnace 4 to mel...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAMAZAKI MOTOHARU, OKUNO TETSUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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