CHARGE TRANSFER DEVICE

PROBLEM TO BE SOLVED: To realize the effective charge transfer by removing part of a second insulation film between first and second d transfer electrodes which form sets of transfer electrodes, thereby resolving the trouble that the potential dips in a horizontal register. SOLUTION: Using the ion implantation method, etc., for mutual gaps of transfer electrodes 5 of a first layer, a p-type impurity of the reverse conductivity to that of n-type buried channels to form n-type regions 6, the electrodes 5 of this first layer are oxidized to from an insulation film 8 and transfer electrodes 7 of a second layer are formed so as to overlap with those of the first layer, provided that part of an insulation film between the electrodes where the transfer electrodes 5 of the first layer are in phase with those 7 of the second layer is removed. The electrodes 5 of the first layer and electrodes 7 of the second layer mutually overlap.