MANUFACTURE OF SEMICONDUCTOR DEVICE

MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To form a silicon nitride film of high reliability by a method wherein a silicon film is deposited on a silicon oxide film by irradiating the silicon oxide film with a light beam of energy higher than a specific value, a polycrystalline silicon film is formed, and then the sili...

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1. Verfasser: TAKIYAMA MASANORI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator TAKIYAMA MASANORI
description PROBLEM TO BE SOLVED: To form a silicon nitride film of high reliability by a method wherein a silicon film is deposited on a silicon oxide film by irradiating the silicon oxide film with a light beam of energy higher than a specific value, a polycrystalline silicon film is formed, and then the silicon nitride film is formed thereon. SOLUTION: A polycrystalline silicon film 22 is processed into the lower electrode of a capacitor by dry etching. Then, The lower electrode is irradiated with an ArF excimer laser beam of above 4.5eV for instance 6.4eV at an energy density of 300mJ/cm for two minutes. Then, by the irradiation with a laser beam, a silicon film 26 as thick as 1nm or so is deposited on the exposed surface of a silicon oxide film 21. Then, a silicon nitride film 23 is formed so as to prevent a natural oxide film from being formed on the surface of the polycrystalline silicon film 22 and the deposited silicon film 26 from being removed.
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SOLUTION: A polycrystalline silicon film 22 is processed into the lower electrode of a capacitor by dry etching. Then, The lower electrode is irradiated with an ArF excimer laser beam of above 4.5eV for instance 6.4eV at an energy density of 300mJ/cm for two minutes. Then, by the irradiation with a laser beam, a silicon film 26 as thick as 1nm or so is deposited on the exposed surface of a silicon oxide film 21. 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SOLUTION: A polycrystalline silicon film 22 is processed into the lower electrode of a capacitor by dry etching. Then, The lower electrode is irradiated with an ArF excimer laser beam of above 4.5eV for instance 6.4eV at an energy density of 300mJ/cm for two minutes. Then, by the irradiation with a laser beam, a silicon film 26 as thick as 1nm or so is deposited on the exposed surface of a silicon oxide film 21. Then, a silicon nitride film 23 is formed so as to prevent a natural oxide film from being formed on the surface of the polycrystalline silicon film 22 and the deposited silicon film 26 from being removed.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MANUFACTURE OF SEMICONDUCTOR DEVICE
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