RESIST DEVELOPING METHOD AND RESIST DEVELOPING EQUIPMENT
PROBLEM TO BE SOLVED: To provide a resist developing method and a resist developing equipment which can form a fine resist pattern with high precision, restrain development defect effectively, and obtain high uniformity of development in the surface of a substrate. SOLUTION: While a wafer 1 wherein...
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| creator | MIYAMOTO KOJIRO |
| description | PROBLEM TO BE SOLVED: To provide a resist developing method and a resist developing equipment which can form a fine resist pattern with high precision, restrain development defect effectively, and obtain high uniformity of development in the surface of a substrate. SOLUTION: While a wafer 1 wherein exposure is finished is rotated, developer is spouted on the vicinity of the wafer 1 center or on the peripheral part, from a developing nozzle 6. In the state that the developer is spouted, the wafer 1 is scanned circumferentially by the nozzle 6, along a specified path starting from the vicinity of the wafer center or the periphery, and the resist is developed. According to the size of the wafer 1, the kind of resist, the form of a resist pattern, the kind of developer, etc., the traveling velocity of the nozzle 6, the number of times of traveling, the traveling direction, the height of the nozzle 6 from the wafer 1, the discharging amount of developer from the nozzle 6, exchange of the nozzle 6, etc., are controlled. |
| format | Patent |
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SOLUTION: While a wafer 1 wherein exposure is finished is rotated, developer is spouted on the vicinity of the wafer 1 center or on the peripheral part, from a developing nozzle 6. In the state that the developer is spouted, the wafer 1 is scanned circumferentially by the nozzle 6, along a specified path starting from the vicinity of the wafer center or the periphery, and the resist is developed. According to the size of the wafer 1, the kind of resist, the form of a resist pattern, the kind of developer, etc., the traveling velocity of the nozzle 6, the number of times of traveling, the traveling direction, the height of the nozzle 6 from the wafer 1, the discharging amount of developer from the nozzle 6, exchange of the nozzle 6, etc., are controlled.</description><edition>6</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19971003&DB=EPODOC&CC=JP&NR=H09260278A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19971003&DB=EPODOC&CC=JP&NR=H09260278A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIYAMOTO KOJIRO</creatorcontrib><title>RESIST DEVELOPING METHOD AND RESIST DEVELOPING EQUIPMENT</title><description>PROBLEM TO BE SOLVED: To provide a resist developing method and a resist developing equipment which can form a fine resist pattern with high precision, restrain development defect effectively, and obtain high uniformity of development in the surface of a substrate. SOLUTION: While a wafer 1 wherein exposure is finished is rotated, developer is spouted on the vicinity of the wafer 1 center or on the peripheral part, from a developing nozzle 6. In the state that the developer is spouted, the wafer 1 is scanned circumferentially by the nozzle 6, along a specified path starting from the vicinity of the wafer center or the periphery, and the resist is developed. According to the size of the wafer 1, the kind of resist, the form of a resist pattern, the kind of developer, etc., the traveling velocity of the nozzle 6, the number of times of traveling, the traveling direction, the height of the nozzle 6 from the wafer 1, the discharging amount of developer from the nozzle 6, exchange of the nozzle 6, etc., are controlled.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1997</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAIcg32DA5RcHENc_XxD_D0c1fwdQ3x8HdRcPRzUcCUdA0M9QzwdfUL4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgaWRmYGRuYWjsbEqAEAiE8o_w</recordid><startdate>19971003</startdate><enddate>19971003</enddate><creator>MIYAMOTO KOJIRO</creator><scope>EVB</scope></search><sort><creationdate>19971003</creationdate><title>RESIST DEVELOPING METHOD AND RESIST DEVELOPING EQUIPMENT</title><author>MIYAMOTO KOJIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH09260278A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1997</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIYAMOTO KOJIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIYAMOTO KOJIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESIST DEVELOPING METHOD AND RESIST DEVELOPING EQUIPMENT</title><date>1997-10-03</date><risdate>1997</risdate><abstract>PROBLEM TO BE SOLVED: To provide a resist developing method and a resist developing equipment which can form a fine resist pattern with high precision, restrain development defect effectively, and obtain high uniformity of development in the surface of a substrate. SOLUTION: While a wafer 1 wherein exposure is finished is rotated, developer is spouted on the vicinity of the wafer 1 center or on the peripheral part, from a developing nozzle 6. In the state that the developer is spouted, the wafer 1 is scanned circumferentially by the nozzle 6, along a specified path starting from the vicinity of the wafer center or the periphery, and the resist is developed. According to the size of the wafer 1, the kind of resist, the form of a resist pattern, the kind of developer, etc., the traveling velocity of the nozzle 6, the number of times of traveling, the traveling direction, the height of the nozzle 6 from the wafer 1, the discharging amount of developer from the nozzle 6, exchange of the nozzle 6, etc., are controlled.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | RESIST DEVELOPING METHOD AND RESIST DEVELOPING EQUIPMENT |
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