CLEANING SOLUTION FOR SEMICONDUCTOR SUBSTRATE AND CLEANING METHOD USING THIS SOLUTION

PROBLEM TO BE SOLVED: To obtain a cleaning solution capable of maximizing cleaning efficiency and enhancing surface characteristics of a material film comprising silicon by constituting with a mixed solution of an HF solution, H2 O2 solution, IPA and deionized water. SOLUTION: This solution comprises the mixed solution of an HF solution, hydrogen peroxide (H2 O2 ) solution, isopropyl alcohol (IPA) and deionized water. Volume-based mixing ratios for an HF solution, H2 O2 solution, IPA and deionized water are desired to be from 1:5 to 15:40, from 60 to 40, or 60. And for instance, a wafer is immersed in a first solution tank filled with a cleaning solution stated above, next, the cleaned wafer is immersed in a second solution tank filled with a deionized water, and the cleaning solution remaining on the surface of the wafer is removed. In addition, it is immersed in a third solution tank filled with the deionized water and the residue remaining on the surface of the wafer is removed, a wafer with the residue removed is rotated and the deionized water remaining on the surface is removed.