MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To obtain a semiconductor device which eliminates a cause obstructing the performance of a high-speed operation when a bipolar transistor is formed, in with the performance of the high-speed operation of every transistor is not different when, e.g. the effective emitter size of one transistor becomes larger than the effective emitter size of the other and in which a MIS(metal insulation silicon) capacitance is formed simultaneously without largely increasing a process. SOLUTION: In the manufacturing method of a semiconductor device which comprises a bipolar transistor and a MIS capacitance element, insulating films 7 which are composed of SiO2 , SiN or the like are formed in the base formation region and the MIS capacitance III formation region of at least a bipolar transistor II on the surface of a semiconductor substrate, the insulating film 7 at least on an emitter formation region is removed, and conductors 8', 8" which are composed of poly-Si are formed in arbitrary regions on the surface of the semiconductor substrate in such a way that at least the region in which the insulating film is removed and the MIS capacitance formation region are included.