ELECTROSTATIC DISCHARGE STRUCTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To avoid malfunctioning of an internal circuit by a method wherein an N-MOS transistor for electrostatic discharge is formed in a P-type pocket well isolated from a P-type semiconductor substrate. SOLUTION: An N-type source region 118 and an N-type drain region 122 by which a c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YANA TAKAKO, BOKU KITETSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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