FIELD EFFECT TRANSISTOR

PURPOSE: To allow the channel width to be expanded by forming a contact region and source region on the front face formed up to the top ends of protrusions in a channel forming region and forming a gate oxide film on the surface of the channel forming region between the source region and extended dr...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	NOSE TADASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!